BC807-16W/ -25W/ -40W
45V PNP SMALL SIGNAL TRANSISTOR IN SOT323
Features Mechanical Data
Ideally Suited for Automatic Insertion Case: SOT323
Epitaxial Planar Die Construction Case Material: Molded Plastic, Green Molding Compound
Complementary NPN Types Available (BC817-xxW) UL Flammability Classification Rating 94V-0
For Switching and AF Amplifier Applications Moisture Sensitivity: Level 1 per J-STD-020
Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Terminals: Finish Matte Tin Plated Leads, Solderable per
Halogen and Antimony Free.Gree Device (Note 3) MIL-STD-202, Method 208
Qualified to AEC-Q101 Standards for High Reliability Weight 0.006 grams (approximate)
SOT323
C
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4)
Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
BC807-16W-7 K5A 7 8 3,000
BC807-25W-7 K5B 7 8 3,000
BC807-40W-7 K5C 7 8 3,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
BC807-16W/ -25W/ -40W
Absolute Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Collector-Base Voltage V -50 V
CBO
Collector-Emitter Voltage V -45 V
CEO
Emitter-Base Voltage V -6 V
EBO
Continuous Collector Current I -500 mA
C
Peak Collector Current I -1.0 A
CM
Peak Base Current I -200 mA
BM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Power Dissipation (Note 5) 200 mW
P
D
Thermal Resistance, Junction to Ambient (Note 5) R 625 C/W
JA
Operating and Storage Temperature Range T T -65 to +150 C
J, STG
ESD Ratings (Note 6)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Emitter Breakdown Voltage (Note 7) BV -45 V I = -10mA
CEO C
Emitter-Base Breakdown Voltage BV -6 V I = -100A
EBO C
-100 nA V = -45V
CE
Collector-Emitter Cutoff Current I
CES
-5.0 A V = -25V, T = +150C
CE J
V = -20V
-100 nA CB
Collector I
CBO
-5.0 A V = -20V, T = +150C
CB J
Emitter-Base Cutoff Current I -100 nA V = -5V
EBO EB
BC807-16W-7
100 250
BC807-25W-7 160 400 I = -100mA, V = -1.0V
C CE
250 600
BC807-40W-7
DC Current Gain (Note 7) h
FE
BC807-16W-7 60
BC807-25W-7 100 I = -300mA, V = -1.0V
C CE
BC807-40W-7 170
Collector-Emitter Saturation Voltage (Note 7) V -700 mV I = -500mA, I = -50mA
CE(sat) C B
Base-Emitter Voltage (Note 7) V -1200 mV I = -300mA, V = -1.0V
BE C CE
V = -5.0V, I = -10mA,
CE C
Gain Bandwidth Product f 100 MHz
T
f = 50MHz
Collector-Base Capacitance C 12 pF V = -10V, f = 1.0MHz
CBO CB
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%.
2 of 5 November 2013
BC807-16W/-25W/-40W
Diodes Incorporated
www.diodes.com
Document Number: DS30577 Rev. 7 - 2