X-On Electronics has gained recognition as a prominent supplier of BC81716TA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC81716TA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC81716TA Diodes Incorporated

BC81716TA electronic component of Diodes Incorporated
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See Product Specifications
Part No.BC81716TA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT
Datasheet: BC81716TA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0227 ea
Line Total: USD 68.1

Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 3000
Multiples : 1
3000 : USD 0.0227
6000 : USD 0.0203
15000 : USD 0.0189
30000 : USD 0.0186
45000 : USD 0.0184

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
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We are delighted to provide the BC81716TA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC81716TA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817/BC818 NPN Epitaxial Silicon Transistor November 2006 BC817/BC818 tm NPN Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages 3 Complement to BC807/ BC808 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* T = 25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : BC817 50 V : BC818 30 V V Collector-Emitter Voltage CEO : BC817 45 V : BC818 25 V V Emitter-Base Voltage 5 V EBO I Collector Current (DC) 800 mA C P Collector Power Dissipation 310 mW C T Junction Temperature 150 C J T Storage Temperature -65 ~ 150 C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I =10mA, I =0 CEO C B : BC817 45 V : BC818 25 V BV Collector-Emitter Breakdown Voltage I =0.1mA, V =0 CES C BE : BC817 50 V : BC818 30 V BV Emitter-Base Breakdown Voltage I =0.1mA, I =0 5 V EBO E C I Collector Cut-off Current V =25V, V =0 100 nA CES CE BE I Emitter Cut-off Current V =4V, I =0 100 nA EBO EB C h DC Current Gain V =1V, I =100mA 100 630 FE1 CE C h V =1V, I =300mA 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I =50mA 0.7 V CE C B V (on) Base-Emitter On Voltage V =1V, I =300mA 1.2 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA 100 MHz T CE C f=50MHz C Output Capacitance V =10V, f=1MHz 12 pF ob CB * Pulse Test: Pulse Width300s, Duty Cycle2% 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC817/BC818 Rev. BBC817/BC818 NPN Epitaxial Silicon Transistor h Classification FE Classification 16 25 40 h 110 ~ 250 160 ~ 400 250 ~ 630 FE1 h 60~ 100~ 170~ FE2 Ordering Information Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions BC81716MTF 8FA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81725MTF 8FB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81740MTF 8FC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81816MTF 8GA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81825MTF 8GB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector BC81840MTF 8GC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector Note1 : Affix -16,-25,-40 means hFE classification. Affix -M means the matte type package. Affix -TF means the tape & reel type packing. 2 www.fairchildsemi.com BC817/BC818 Rev. B

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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