BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Epitaxial Planar Die Construction Case Material: molded plastic, Green molding compound Complementary PNP Types: BC807-xxW UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Applications Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Terminals: Finish Matte Tin Plated Leads, Solderable per Halogen and Antimony Free.Gree Device (Note 3) MIL-STD-202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight 0.006 grams (approximate) SOT323 C B E Top View Top View Device Symbol Pin-Out Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel BC817-16W-7 K6A 7 8 3,000 BC817-25W-7 K6B 7 8 3,000 BC817-40W-7 K6C 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC817-16W/-25W/-40W Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 5 V EBO Continuous Collector Current I 500 mA C Peak Collector Current 1.0 A I CM Peak Base Current 200 mA I BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient (Note 5) R 625 C/W JA Operating and Storage Temperature Range T T -65 to +150 C J, STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Emitter Breakdown Voltage (Note 7) BV 45 V I = 10mA CEO C Emitter-Base Breakdown Voltage BV 5 V I = 100A EBO C 100 nA V = 45V CE Collector-Emitter Cutoff Current I CES 5.0 A V = 25V, T = +150C CE J 100 nA V = 20V CE Collector-Base Cutoff Current I CBO 5.0 A V = 20V, T = +150C CE J Emitter-Base Cutoff Current I 100 nA V = 5V EBO EB BC817-16W 100 250 BC817-25W I = 100mA, V = 1.0V 160 400 C CE BC817-40W 250 600 DC Current Gain (Note 7) h FE BC817-16W 60 BC817-25W 100 I = 300mA, V = 1.0V C CE BC817-40W 170 Collector-Emitter Saturation Voltage (Note 7) V 700 mV I = 500mA, I = 50mA CE(SAT) C B Base-Emitter Voltage (Note 7) V 1200 mV I = 300mA, V = 1.0V BE C CE V = 5.0V, I = 10mA, CE C Gain Bandwidth Product f 100 MHz T f = 50MHz Collector-Base Capacitance C 12 pF V = 10V, f = 1.0MHz CBO CB Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 Jan 2014 BC817-16W/-25W/-40W Diodes Incorporated www.diodes.com Document Number: DS30575 Rev. 5 - 2