X-On Electronics has gained recognition as a prominent supplier of BC847B-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847B-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847B-7-F Diodes Incorporated

Hot BC847B-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.BC847B-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 300 mW Surface Mount SOT-23-3
Datasheet: BC847B-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0139 ea
Line Total: USD 41.7

Availability - 2910
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1049
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 759
Multiples : 1
759 : USD 0.1712
1000 : USD 0.171

58200
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 5882
Multiples : 1
5882 : USD 0.0221
9000 : USD 0.0207

2910
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0139
12000 : USD 0.0139
30000 : USD 0.0139
75000 : USD 0.0139
120000 : USD 0.0139

15190
Ship by Wed. 31 Jul to Mon. 05 Aug
MOQ : 20
Multiples : 20
20 : USD 0.0308
200 : USD 0.0243
600 : USD 0.0207
3000 : USD 0.0183
9000 : USD 0.0164
21000 : USD 0.0155

18560
Ship by Tue. 30 Jul to Thu. 01 Aug
MOQ : 1
Multiples : 1
1 : USD 0.161
10 : USD 0.1139
100 : USD 0.0483
1000 : USD 0.0345
3000 : USD 0.0253
9000 : USD 0.0242

5676
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 1
Multiples : 1
1 : USD 0.104
10 : USD 0.0728
50 : USD 0.0494
100 : USD 0.0416
500 : USD 0.0299

58200
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 4975
Multiples : 1
4975 : USD 0.0221

11640
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0229
9000 : USD 0.0178

4260240
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 9000
Multiples : 3000
9000 : USD 0.0222

1049
Ship by Wed. 24 Jul to Tue. 30 Jul
MOQ : 752
Multiples : 1
752 : USD 0.1728

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847B-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847B-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847B-7-F is a PNP switching transistor manufactured by Diodes Incorporated. It is a transistor, which is a type of semiconductor device used to amplify or switch electronic signals and electrical power. The BC847B-7-F is housed in a SOT-23 surface mount package, which is a type of package used to house semiconductor devices in a form factor that has a low profile. Its maximum collector current is 200mA, its collector-emitter breakdown voltage is 40V, and its maximum power dissipation is 625mW at 25°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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