X-On Electronics has gained recognition as a prominent supplier of BC847B-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847B-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847B-7-F Diodes Incorporated

Hot BC847B-7-F electronic component of Diodes Incorporated
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Part No.BC847B-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 300 mW Surface Mount SOT-23-3
Datasheet: BC847B-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6135: USD 0.0212 ea
Line Total: USD 130.06 
Availability - 58200
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ: 6135  Multiples: 1
Pack Size: 1
Availability Price Quantity
564
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 582
Multiples : 1
582 : USD 0.1213

58200
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 6135
Multiples : 1
6135 : USD 0.0212
9000 : USD 0.0209
15000 : USD 0.0181
21000 : USD 0.0178
30000 : USD 0.017
75000 : USD 0.0158

8322
Ship by Tue. 10 Dec to Fri. 13 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0312
200 : USD 0.0244
600 : USD 0.0208
3000 : USD 0.0185
9000 : USD 0.0166
21000 : USD 0.0157

19273
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.121
10 : USD 0.0858
100 : USD 0.044
1000 : USD 0.0385
3000 : USD 0.0231

8067
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 0.126
10 : USD 0.0924
50 : USD 0.0742
100 : USD 0.049
500 : USD 0.0392

192060
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0264
6000 : USD 0.0261
9000 : USD 0.0259
15000 : USD 0.0224
21000 : USD 0.0222
30000 : USD 0.021
75000 : USD 0.0193

58200
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 6135
Multiples : 1
6135 : USD 0.0212

4234050
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 9000
Multiples : 3000
9000 : USD 0.0222

564
Ship by Tue. 03 Dec to Mon. 09 Dec
MOQ : 472
Multiples : 1
472 : USD 0.1213

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
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Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847B-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847B-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847B-7-F is a PNP switching transistor manufactured by Diodes Incorporated. It is a transistor, which is a type of semiconductor device used to amplify or switch electronic signals and electrical power. The BC847B-7-F is housed in a SOT-23 surface mount package, which is a type of package used to house semiconductor devices in a form factor that has a low profile. Its maximum collector current is 200mA, its collector-emitter breakdown voltage is 40V, and its maximum power dissipation is 625mW at 25°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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