X-On Electronics has gained recognition as a prominent supplier of BC847BFA-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BFA-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847BFA-7B Diodes Incorporated

BC847BFA-7B electronic component of Diodes Incorporated
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Part No.BC847BFA-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT 45V NPN SM Trans 435mW 100mA
Datasheet: BC847BFA-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.418 ea
Line Total: USD 0.42 
Availability - 11466
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8307
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1956
10 : USD 0.1724
30 : USD 0.1624
100 : USD 0.15
500 : USD 0.1445
1000 : USD 0.1411

11466
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.418
10 : USD 0.2662
100 : USD 0.1507
1000 : USD 0.1144
2500 : USD 0.11
10000 : USD 0.0979
20000 : USD 0.0902

349200
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.1067

   
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Product Category
RoHS - XON
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We are delighted to provide the BC847BFA-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BFA-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847BFA 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BV > 45V Case: X2-DFN0806-3 CEO I = 100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound C P = 435mW Power Dissipation UL Flammability Classification Rating 94V-0 D 2 0.48mm Package Footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020 0.4mm Height Package Minimizing Off-Board Profile Terminals: Finish NiPdAu, Solderable per MIL-STD-202, e4 Complementary PNP Type BC857BFA Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.0008 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability X2-DFN0806-3 C B B C E E Top View Device Schematic Device Symbol Bottom View Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel BC847BFA-7B 1F 7 8mm 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC847BFA Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 435 mW D Thermal Resistance, Junction to Ambient (Note 5) 287 C/W R JA Thermal Resistance, Junction to Lead (Note 6) 150 C/W R JL Operating and Storage and Temperature Range -55 to +150 T , T C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class 3A Electrostatic Discharge - Human Body Model ESD HBM 4,000 V B Electrostatic Discharge - Machine Model ESD MM 200 V Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 0.45 V CE(sat) 0.40 Limited 0.35 100m 0.30 DC 1s 0.25 100ms 0.20 10ms 0.15 1ms 0.10 Single Pulse 10m T =25C 0.05 amb 0.00 10m 100m 1 10 0 20 40 60 80 100 120 140 160 V Collector-Emitter Voltage (V) Temperature (C) CE Safe Operating Area Derating Curve 300 T =25C 275 amb Single Pulse 100 250 T =25C amb 225 200 175 D=0.5 10 150 125 100 D=0.2 Single Pulse 75 D=0.05 50 1 25 D=0.1 0 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 6 BC847BFA March 2015 Diodes Incorporated www.diodes.com Document number: DS36018 Rev. 2 - 2 I Collector Current (A) Thermal Resistance (C/W) C Max Power Dissipation (W) Maximum Power (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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