X-On Electronics has gained recognition as a prominent supplier of BC847BFZ-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BFZ-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847BFZ-7B Diodes Incorporated

BC847BFZ-7B electronic component of Diodes Incorporated
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Part No.BC847BFZ-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Diodes Incorporated Bipolar Transistors - BJT NPN SS Trans 435mW 45Vceo 0.435W 125mV
Datasheet: BC847BFZ-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.451 ea
Line Total: USD 0.45 
Availability - 9836
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9836
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.451
10 : USD 0.374
100 : USD 0.2541
500 : USD 0.1991
1000 : USD 0.1529
2500 : USD 0.1452
10000 : USD 0.1276

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Tradename
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847BFZ-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BFZ-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847BFZ 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0606 Features Mechanical Data BV > 45V Case: X2-DFN0606-3 CEO I = 100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound, C P = 925mW Power Dissipation UL Flammability Classification Rating 94V-0 D 2 0.36mm Package Footprint, 40% Smaller than DFN1006 Moisture Sensitivity: Level 1 per J-STD-020 0.4mm Height Package Minimizing Off-Board Profile Terminals: Finish NiPdAu, Solderable per MIL-STD-202, e4 Complementary PNP Type BC857BZ Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.0008 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) X2-DFN0606-3 C B E Top View Device Schematic Device Symbol Bottom View Top View Ordering Information (Note 4) Product Marking Reel Size (inches) Tape Width (mm) Quantity per Reel BC847BFZ-7B 1F 7 8mm 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC847BFZ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 6.0 V EBO Continuous Collector Current 100 mA I C Peak Pulse Collector Current 200 mA I CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 270 Power Dissipation mW P D (Note 6) 925 (Note 5) 465 Thermal Resistance, Junction to Ambient C/W R JA (Note 6) 135 Thermal Resistance, Junction to Lead (Note 7) 135 C/W R JL Operating and Storage and Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 March 2015 BC847BFZ Diodes Incorporated www.diodes.com Document number: DS37157 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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