BC847BS DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data BV >45V Case: SOT363 CEO Ultra-Small Surface Mount Package Case Material: Molded Plastic, Green Molding Compound. Ideally Suited for Automated Insertion UL Flammability Classification Rating 94V-0 For switching and AF Amplifier Application Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Terminals: FinishMatte Tin Finish. Solderable per MIL-STD- e3 Halogen- and Antimony-Free.Gree Device (Note 3) 202, Method 208 For automotive applications requiring specific change Weight: 0.006 grams (Approximate) control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. BC847BS Absolute Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 6 V EBO Collector Current I 100 mA C Peak Collector Current 200 mA ICM Peak Base Current 200 mA I BM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient (Note 5) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage 50 V BV I = 100A, I = 0 CBO C B Collector-Emitter Breakdown Voltage 45 V BV I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage 6 V BV I = 100A, I = 0 EBO E C DC Current Gain h 200 450 V = 5.0V, I = 2.0mA FE CE C 100 I = 10mA, I = 0.5mA C B Collector-Emitter Saturation Voltage V mV CE(sat) 400 I = 100mA, I = 5.0mA C B Base-Emitter Saturation Voltage V 755 mV I = 10mA, I = 0.5mA BE(sat) C B Base-Emitter Voltage 580 665 700 mV V V = 5.0V, I = 2.0mA BE(on) CE C 20 nA V = 40V CB Collector-Cutoff Current I CBO 5.0 A V = 40V, T = +125C CB A Emitter-Cutoff Current I 100 nA V = 5.0V, I = 0 EBO EB C V = 5.0V, I = 10mA, CE C Gain Bandwidth Product 100 MHz f T f = 100MHz Collector-Base Capacitance 2.0 3.0 pF C V = 10V, f = 1.0MHz CBO CB Emitter-Base Capacitance 11 pF C V = 0.5V, f = 1.0MHz EBO EB Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 6. Short duration pulse test used to minimize self-heating effect. 2 of 5 November 2020 BC847BS Diodes Incorporated www.diodes.com Document number: DS30222 Rev. 15 - 2