PART OBSOLETE - USE BC847BVC BC847BV NPN DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-563 C B E Complementary PNP Type Available (BC857BV) 2 1 2 Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.25 B Lead Free By Design/RoHS Compliant (Note 3) K4V YM C Gree Device (Note 5 and 6) B 1.10 1.25 1.20 E B C 1 1 2 C 1.55 1.70 1.60 Mechanical Data D G D 0.50 Case: SOT-563 G 0.90 1.10 1.00 Case Material: Molded Plastic. UL Flammability H 1.50 1.70 1.60 Classification Rating 94V-0 M K Moisture Sensitivity: Level 1 per J-STD-020C K 0.56 0.60 0.60 Terminal Connections: See Diagram H L 0.10 0.30 0.20 L Terminals: Finish - Matte Tin annealed over Alloy 42 M 0.10 0.18 0.11 leadframe. Solderable per MIL-STD-202, Method 208 C B E 2 See Note 1 1 2 Marking Information: K4V, See Page 2 All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.003 grams (approximate) E B C 1 1 2 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit V 50 V Collector-Base Voltage CBO 45 V Collector-Emitter Voltage V CEO 6.0 V Emitter-Base Voltage V EBO Collector Current 100 mA I C Power Dissipation (Note 2) 150 mW P d Thermal Resistance, Junction to Ambient (Note 2) 833 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 4) V 50 V I = 10A, I = 0 (BR)CBO C B Collector-Emitter Breakdown Voltage (Note 4) 45 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage (Note 4) 6 V V I = 1A, I = 0 (BR)EBO E C DC Current Gain (Note 4) 200 290 450 h V = 5.0V, I = 2.0mA FE CE C 100 IC = 10mA, IB = 0.5mA Collector-Emitter Saturation Voltage (Note 4) mV V CE(SAT) 300 I = 100mA, I = 5.0mA C B 700 I = 10mA, I = 0.5mA C B Base-Emitter Saturation Voltage (Note 4) mV V BE(SAT) 900 I = 100mA, I = 5.0mA C B 580 660 700 V = 5.0V, I = 2.0mA CE C Base-Emitter Voltage (Note 4) V mV BE 770 V = 5.0V, I = 10mA CE C I 15 nA V = 30V CBO CB Collector-Emitter Cutoff Current (Note 4) 5.0 A I V = 30V, T = 150C CBO CB A V = 5.0V, I = 10mA, CE C Gain Bandwidth Product 100 MHz f T f = 100MHz Output Capacitance C 4.5 pF V = 10V, f = 1.0MHz OBO CB V = 5V, R = 2.0k, CE S Noise Figure NF 10 dB f = 1.0kHz, BW = 200Hz Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180 rotated, or mixed (both ways). 2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at BC847BV 250 0.4 I C = 20 I B 200 0.3 150 0.2 T = 25C A 100 T = 150C A 0.1 50 T = -50C A R = 833 C/W qJA 0 0 -50 0 50 100 150 0.1 1 10 100 1,000 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Derating Curve - Total Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current 1,000 1,000 T = 150C A V = 5V CE T = 25C A 100 100 T = -50C A 10 10 1 1 10 100 1,000 1 1 10 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 3, DC Current Gain vs. Collector Current Fig. 4, Gain Bandwidth Product vs. Collector Current 2 of 4 May 2021 BC847BV Diodes Incorporated www.diodes.com Document number: DS30432 Rev. 6 - 4 OBSOLETE PART DISCONTINUED h DC CURRENT GAIN P , POWER DISSIPATION (mW) FE, d V , COLLECTOR TO EMITTER CE(SAT) f , GAIN BANDWIDTH PRODUCT (MHz) T SATURATION VOLTAGE (V)