BC847BVN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data Epitaxial Die Construction Surface Mount Package Two Internally Isolated NPN/PNP Transistors in One Package Weight: 0.003 grams (Approximate) Ultra-Small Surface Mount Package Max Soldering Temperature +260C for 30 secs as per JEDEC J- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) STD-020 Halogen- and Antimony-Free. Green Device (Note 3) Case Material Molded Plastic, UL Flammability Rating 94V-0 For automotive applications requiring specific change Terminals: Finish Matte Tin Plated Leads, Solderable control (i.e. parts qualified to AEC-Q100/101/200, PPAP per MIL-STD-202, Method 208 capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. BC847BVN Maximum Ratings: NPN, BC847B Type (Q ) ( T = +25C, unless otherwise specified.) 1 A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 6 V EBO Collector Current I 100 mA C Peak Pulse Collector Current (single pulse) 200 mA I CM Peak Pulse Emitter Current (single pulse) 200 mA I EM Maximum Ratings: PNP, BC857B Type (Q ) ( T = +25C unless otherwise specified.) 2 A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage -45 V VCEO Emitter-Base Voltage -6 V V EBO Collector Current -100 mA I C Peak Pulse Collector Current (single pulse) -200 mA I CM Peak Pulse Emitter Current (single pulse) -200 mA I EM Thermal Characteristics Total Device ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) Total Device P 150 mW D Thermal Resistance, Junction to Ambient (Note 5) 833 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Note: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. Thermal Characteristics Total Device 200 150 100 50 R = 833 C/W JA 0 -50 0 50 100 150 T , AMBIENT TEMPERATURE (C) A Figure 1. Power Dissipation vs. Ambient Temperature P T D V A Total Device 2 of 6 May 2021 BC847BVN Diodes Incorporated www.diodes.com Document number: DS30627 Rev. 9 - 2 P , POWER DISSIPATION (mW) D