X-On Electronics has gained recognition as a prominent supplier of BC847PN-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847PN-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847PN-7-F Diodes Incorporated

BC847PN-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.BC847PN-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN BIPOLAR
Datasheet: BC847PN-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.023 ea
Line Total: USD 69 
Availability - 46560
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
5687
Ship by Wed. 11 Dec to Mon. 16 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0607
100 : USD 0.0493
300 : USD 0.0435
3000 : USD 0.039
6000 : USD 0.0357
9000 : USD 0.0339

249052
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.242
10 : USD 0.1408
100 : USD 0.0715
1000 : USD 0.0594
3000 : USD 0.044
9000 : USD 0.0429

2828
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.1666
50 : USD 0.112
100 : USD 0.0952
413 : USD 0.0406

46560
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.023

4583
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 249
Multiples : 1
249 : USD 0.0307

49470
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0268

110580
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0439
9000 : USD 0.0435

   
Manufacturer
Product Category
RoHS - XON
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Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
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Width
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Cnhts
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the BC847PN-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847PN-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Case: SOT363 Two Internally Isolated NPN/PNP Transistors in One Package Case Material: Molded Plastic, Green Molding Compound. Ideal for Medium Power Amplification and Switching UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Finish. Solderable per Halogen and Antimony Free.Gree Device (Note 3) MIL-STD-202, Method 208 An Automotive-Compliant Part is Available Under Separate Weight: 0.006 grams (Approximate) Datasheet (BC847PNQ) SOT363 C1 B2 E2 E1 B1 C2 Top View Device Schematic Top View Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel BC847PN-7-F AEC-Q101 K7P 7 8 3,000 BC847PN-13-F AEC-Q101 K7P 13 8 10,000 BC847PN-7R-F AEC-Q101 K7P 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC847PN Absolute Maximum Ratings: NPN, BC847B Type (Q ) ( T = +25C, unless otherwise specified.) 1 A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 6 V EBO Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Emitter Current 200 mA I EM Absolute Maximum Ratings: PNP, BC857B Type (Q ) ( T = +25C, unless otherwise specified.) 2 A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage -6 V VEBO Collector Current -100 mA I C Peak Collector Current -200 mA I CM Peak Emitter Current -200 mA I EM Thermal Characteristics Total Device ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) Total Device P 200 mW D Thermal Resistance, Junction to Ambient (Note 5) 625 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Note: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB the device is measured under still air conditions whilst operating in a steady-state. Thermal Characteristics Total Device 250 200 150 100 50 0 0 40 80 120 160 200 T , AMBIENT TEMPERATURE (C) A Fig. 1, Power Derating Curve (Total Device) 2 of 6 BC847PN June 2016 Diodes Incorporated www.diodes.com Document number: DS30278 Rev. 14 - 2 P , POWER DISSIPATION (mW) d

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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