X-On Electronics has gained recognition as a prominent supplier of BC847PNQ-7R-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847PNQ-7R-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC847PNQ-7R-F Diodes Incorporated

BC847PNQ-7R-F electronic component of Diodes Incorporated
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Part No.BC847PNQ-7R-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT General Purpose Transistor
Datasheet: BC847PNQ-7R-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.22 ea
Line Total: USD 0.22 
Availability - 9422
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
38
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0679
50 : USD 0.0664
150 : USD 0.0655
500 : USD 0.0645

9422
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.22
10 : USD 0.1529
100 : USD 0.0792
1000 : USD 0.0704
3000 : USD 0.0616
9000 : USD 0.0572
24000 : USD 0.0462

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847PNQ-7R-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847PNQ-7R-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847PNQ COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT363 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 Epitaxial Die Construction Weight: 0.006 grams (Approximate) Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT363 C1 B2 E2 E1 B1 C2 Top View Device Schematic Top View Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel BC847PNQ-7-F Automotive K7P 7 8 3,000 BC847PNQ-7R-F Automotive K7P 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC847PNQ Absolute Maximum Ratings: NPN, BC847B Type (Q ) ( T = +25C, unless otherwise specified.) 1 A Characteristic Symbol Value Unit Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 6 V EBO Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Emitter Current 200 mA I EM Absolute Maximum Ratings: PNP, BC857B Type (Q ) ( T = +25C, unless otherwise specified.) 2 A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage -6 V VEBO Collector Current -100 mA I C Peak Collector Current -200 mA I CM Peak Emitter Current -200 mA I EM Thermal Characteristics Total Device ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) Total Device P 200 mW D Thermal Resistance, Junction to Ambient (Note 6) 625 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Note: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB the device is measured under still air conditions whilst operating in a steady-state. Thermal Characteristics Total Device 250 200 150 100 50 0 0 40 80 120 160 200 T , AMBIENT TEMPERATURE (C) A Fig. 1, Power Derating Curve (Total Device) 2 of 6 BC847PNQ June 2016 Diodes Incorporated www.diodes.com Document number: DS38982 Rev. 1 - 2 P , POWER DISSIPATION (mW) d

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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