X-On Electronics has gained recognition as a prominent supplier of BC857BFA-7B Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857BFA-7B Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857BFA-7B Diodes Incorporated

BC857BFA-7B electronic component of Diodes Incorporated
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Part No.BC857BFA-7B
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 45 V 100 mA 340MHz 435 mW Surface Mount X2-DFN0806-3
Datasheet: BC857BFA-7B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10000: USD 0.1067 ea
Line Total: USD 1067 
Availability - 911800
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
911800
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 10000
Multiples : 10000
10000 : USD 0.1067

   
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We are delighted to provide the BC857BFA-7B from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857BFA-7B and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data BV > -45V Case: X2-DFN0806-3 CEO I = -100mA High Collector Current C Case Material: Molded Plastic, Green Molding Compound. P = 435mW Power Dissipation D UL Flammability Classification Rating 94V-0 2 0.48mm Package Footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020 0.4mm Height Package Minimizing Off-Board Profile Terminals: Finish NiPdAu, Solderable per MIL-STD-202, e4 Complementary NPN Type BC847BFA Method 208 Weight: 0.0008 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability C X2-DFN0806-3 B B C E E Top View Device Schematic Device Symbol Bottom View Top View Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel BC857BFA-7B 3W 7 8mm 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC857BFA Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 435 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 287 C/W JA Thermal Resistance, Junction to Lead (Note 6) 150 C/W R JL Operating and Storage and Temperature Range -55 to +150 C T , T J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Thermal resistance from junction to solder-point (on the exposed collector pad). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 0.45 V CE(sat) 0.40 Limited 0.35 100m 0.30 0.25 DC 1s 0.20 100ms 10ms 0.15 1ms 0.10 Single Pulse T =25C 0.05 100s amb 10m 0.00 100m 1 10 0 20 40 60 80 100 120 140 160 - V Collector-Emitter Voltage (V) Temperature (C) CE Safe Operating Area Derating Curve 300 T =25C 275 amb Single Pulse 100 250 T =25C amb 225 200 175 D=0.5 10 150 125 100 D=0.2 Single Pulse 75 D=0.05 50 1 25 D=0.1 0 100 1m 10m 100m 1 10 100 1k 100 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Pulse Power Dissipation 2 of 6 BC857FA May 2017 Diodes Incorporated www.diodes.com Document number: DS36019 Rev. 2 - 2 - I Collector Current (A) Thermal Resistance (C/W) C Max Power Dissipation (W) Maximum Power (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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