BC857BS 45V DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Ideally Suited for Automated Insertion Case Material: Molded Plastic, Green Molding Compound. For switching and AF Amplifier Application UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free.Gree Device (Note 3) Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- e3 Qualified to AEC-Q101 Standards for High Reliability 202, Method 208 PPAP capable (Note 4) Weight: 0.006 grams (approximate) SOT363 C1 C2 B2 B1 SOT363 E1 E2 Top View Top View Device Symbol Pin-Out Ordering Information (Notes 4 & 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel BC857BS-7-F AEC-Q101 K3W 7 8 3,000 BC857BSQ-7-F Automotive K3W 7 8 3,000 BC857BS-13-F AEC-Q101 K3W 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC857BS Absolute Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -50 V V CBO Collector-Emitter Voltage -45 V V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current -100 mA I C Peak Collector Current I -200 mA CM Peak Base Current I -200 mA BM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 6) 625 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = 100A, I = 0 CBO C B Collector-Emitter Breakdown Voltage -45 V BV I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage BV -5 V I = 100A, I = 0 EBO E C DC Current Gain h 220 475 V = -5.0V, I = -2.0mA FE CE C -100 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage V mV CE(sat) -400 I = -100mA, I = -5.0mA C B Base-Emitter Saturation Voltage -700 mV V I = -10mA, I = -0.5mA BE(sat) C B Base-Emitter Voltage -580 -665 -750 mV V V = -5.0V, I = -2.0mA BE(on) CE C -15 nA V = -30V CB Collector-Cutoff Current I CBO -4.0 A V = -30V, T = +150C CB A Emitter Cutoff Current I -100 nA V = -5.0V, I = 0 EBO EB C V = -5.0V, I = -10mA, CE C Gain Bandwidth Product 100 MHz f T f = 100MHz Collector-Base Capacitance 2 3 pF C V = -10V, f = 1.0MHz CBO CB Emitter-Base Capacitance 11 pF C V = -0.5V, f = 1.0MHz EBO EB Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 November 2013 BC857BS Diodes Incorporated www.diodes.com Datasheet Number DS30373 Rev. 8 - 2