X-On Electronics has gained recognition as a prominent supplier of BC857BTQ-7 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857BTQ-7 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857BTQ-7 Diodes Incorporated

BC857BTQ-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.BC857BTQ-7
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT General Purpose Transistor
Datasheet: BC857BTQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.165 ea
Line Total: USD 0.16 
Availability - 3174
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3174
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.165
10 : USD 0.1111
100 : USD 0.0572
1000 : USD 0.0517
3000 : USD 0.0462
9000 : USD 0.0319
24000 : USD 0.0308

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC857BTQ-7 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857BTQ-7 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC857BTQ 45V PNP SMALL SIGNAL TRANSISTOR IN SOT523 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT523 stringent requirements of Automotive applications. Case Material: Molded Plastic. Green Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Plated Leads Features Solderable per MIL-STD-202, Method 208 Weight: 0.002 grams (Approximate) BV > -45V CEO I = -100mA Collector Current C Epitaxial Planar Die Construction Ultra-Small Surface Mount Package Complementary NPN Type: BC847BTQ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) C SOT523 B E Pin-Out Top View Top View Device Symbol Ordering Information (Notes 4 and 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel BC857BTQ-7 Automotive 3W 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC857BTQ Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage -50 V V CBO Collector-Emitter Voltage -45 V V CEO Emitter-Base Voltage -5.0 V VEBO Collector Current I -100 mA C Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 150 mW P D Thermal Resistance, Junction to Ambient (Note 6) 833 C/W R JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 6. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics and Derating Information 2 of 6 BC857BTQ September 2017 Diodes Incorporated www.diodes.com Document number: DS39547 Rev. 1 - 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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