BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Die Construction Case: SOT-563 Complementary PNP Type Available (BC847BV) Case Material: Molded Plastic, Green Molding Compound Ultra-Small Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminal Connections: See Diagram Qualified to AEC-Q101 Standards for High Reliability Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.003 grams (Approximate) SOT-563 C B E 1 2 2 E B C 1 1 2 Bottom View Top View Device Schematic (Note 5) Ordering Information (Note 4) Part Number Case Packaging BC857BV-7 SOT-563 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BC857BV Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current -100 mA IC Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) P 150 mW D Thermal Resistance, Junction to Ambient (Note 6) 833 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 7) V -50 V I = 10A, I = 0 (BR)CBO C B Collector-Emitter Breakdown Voltage (Note 7) -45 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage (Note 7) -5 V V I = 1A, I = 0 (BR)EBO E C DC Current Gain (Note 7) 220 290 475 h V = -5.0V, I = -2.0mA FE CE C -100 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage (Note 7) V mV CE(SAT) -400 I = -100mA, I = -5.0mA C B -700 I = -10mA, I = -0.5mA C B Base-Emitter Saturation Voltage (Note 7) V mV BE(SAT) -900 I = -100mA, I = -5.0mA C B -600 -750 V = -5.0V, I = -2.0mA CE C Base-Emitter Voltage (Note 7) mV V BE(ON) -820 V = -5.0V, I = -10mA CE C -15 nA V = -30V CB Collector Cut-Off Current (Note 7) I CBO -4.0 A V = -30V, T = +150C CB A Gain Bandwidth Product 100 MHz f V = -5.0V, I = -10mA, f = 100MHz T CE C Output Capacitance 4.5 pF C V = -10V, f = 1.0MHz OB CB I = -0.2mA, V = -5.0Vdc, C CE Noise Figure NF 10 dB R = 2.0K, f = 1.0KHz, BW = 200Hz S Notes: 6. Device mounted on FR-4 PCB, 1-inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at