BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Die Construction SOT-523 Complementary NPN Types Available (BC847AT,BT,CT) C Dim Min Max Typ Ultra-Small Surface Mount Package A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 Qualified to AEC-Q101 Standards for High Reliability Gree Device (Note 4 and 5) C 1.45 1.75 1.60 E B D 0.50 G Mechanical Data G 0.90 1.10 1.00 H Case: SOT-523 H 1.50 1.70 1.60 Case Material - Molded Plastic. UL Flammability K M J 0.00 0.10 0.05 N Classification Rating 94V-0 K 0.60 0.80 0.75 Moisture Sensitivity: Level 1 per J-STD-020C J Terminals: Solderable per MIL-STD-202, Method 208 L 0.10 0.30 0.22 D L Lead Free Plating (Matte Tin Finish annealed over Alloy M 0.10 0.20 0.12 42 leadframe). Type Marking N 0.45 0.65 0.50 Terminal Connections: See Diagram BC857AT 3V 0 8 Marking Code: See Table Below & Diagram on Page 2 BC857BT 3W BC857CT 3G All Dimensions in mm Ordering & Date Code Information: See Page 2 Weight: 0.002 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit V -50 V Collector-Base Voltage CBO V -45 V Collector-Emitter Voltage CEO -5.0 V Emitter-Base Voltage V EBO Collector Current I -100 mA C Power Dissipation (Note 1) 150 mW P d Thermal Resistance, Junction to Ambient (Note 1) R 833 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage (Note 3) -50 V V I = 10A, I = 0 (BR)CBO C B Collector-Emitter Breakdown Voltage (Note 3) -45 V V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage (Note 3) V -5 V I = 1A, I = 0 (BR)EBO E C DC Current Gain (Note 3) Current Gain A 125 250 B h 220 290 475 FE V = -5.0V, I = -2.0mA CE C C 420 520 800 -300 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage (Note 3) mV V CE(SAT) -650 I = -100mA, I = -5.0mA C B -700 I = -10mA, I = -0.5mA C B Base-Emitter Saturation Voltage (Note 3) V mV BE(SAT) -900 I = -100mA, I = -5.0mA C B -600 -750 V = -5.0V, I = -2.0mA CE C Base-Emitter Voltage (Note 3) V mV BE(ON) -820 V = -5.0V, I = -10mA CE C -15 NA V = -30V CB Collector-Cutoff Current (Note 3) I -4.0 A V = -30V, T = 150C CBO CB A Gain Bandwidth Product f 100 MHz V = -5.0V, I = -10mA, f = 100MHz T CE C Output Capacitance C 4.5 pF V = -10V, f = 1.0MHz OB CB I = -0.2mA, V = -5.0Vdc, C CE Noise Figure NF 10 dB R = 2.0K, f = 1.0KHz, S BW = 200Hz Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at 250 0.5 I C = 10 I B 0.4 200 0.3 150 T = 25C A 0.2 100 T = 150C A 50 0.1 T = -50C A 0 0 200 0 25 50 75 100 125 150 175 0.1 1 10 100 1,000 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Fig. 2, Collector Emitter Saturation Voltage Ambient Temperature vs. Collector Current 1,000 1,000 T = 150C A V = 5V CE V = 5V CE 100 T = 25C A T = -50C A 100 10 10 1 10 1 10 100 1,000 1 100 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Fig. 4, Gain Bandwidth Product vs. Collector Current Fig. 3, DC Current Gain vs. Collector Current Ordering Information (Note 6) Packaging Shipping Device SOT-523 3000/Tape & Reel BC857AT-7-F SOT-523 3000/Tape & Reel BC857BT-7-F SOT-523 3000/Tape & Reel BC857CT-7-F Notes: 6. For packaging details, go to our website at