X-On Electronics has gained recognition as a prominent supplier of BC857CW-7-F Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC857CW-7-F Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC857CW-7-F Diodes Incorporated

BC857CW-7-F electronic component of Diodes Incorporated
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See Product Specifications
Part No.BC857CW-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BIPOLAR TRANSISTOR PNP SOT-323
Datasheet: BC857CW-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0343 ea
Line Total: USD 102.9 
Availability - 314280
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2279
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0417
200 : USD 0.0339
600 : USD 0.0293
3000 : USD 0.0267
9000 : USD 0.0244
21000 : USD 0.0232

5800
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 20
Multiples : 20
20 : USD 0.0588
100 : USD 0.0322
500 : USD 0.028
720 : USD 0.0238
1940 : USD 0.0224

314280
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0343
6000 : USD 0.0334
9000 : USD 0.0291
15000 : USD 0.0284
21000 : USD 0.0273
24000 : USD 0.0264
30000 : USD 0.0256
45000 : USD 0.0247
75000 : USD 0.0231
150000 : USD 0.0221
300000 : USD 0.0213

247350
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 9000
Multiples : 3000
9000 : USD 0.0222

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
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Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
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We are delighted to provide the BC857CW-7-F from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC857CW-7-F and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Complementary NPN Types Available (BC846AW - BC848CW) Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free.Gree Device (Note 3) Terminals: FinishMatte Tin Plated Leads, Solderable per Qualified to AEC-Q101 Standards for High Reliability MIL-STD-202, Method 208 PPAP Capable (Note 4) Weight: 0.006 grams (Approximate) SOT323 C B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Reel Size Quantity Reel Size Quantity Product Compliance Marking Product Compliance Marking (inches) per Reel (inches) per Reel BC856AW-7-F AEC-Q101 K3A 7 3000 BC857BWQ-13-F Automotive K3B 13 10,000 BC856BW-7-F AEC-Q101 K3B 7 3000 BC857CW-7-F AEC-Q101 K3G 7 3000 BC856BW-13-F AEC-Q101 K3B 13 10,000 BC858AW-7-F AEC-Q101 K3A 7 3000 BC857AW-7-F AEC-Q101 K3A 7 3000 BC858BW-7-F AEC-Q101 K3B 7 3000 BC857BW-7-F AEC-Q101 K3B 7 3000 BC858CW-7-F AEC-Q101 K3G 7 3000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See BC856AW-BC858CW Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit BC856 -80 Collector-Base Voltage BC857 V -50 V CBO BC858 -30 BC856 -65 Collector-Emitter Voltage BC857 -45 V V CEO BC858 -30 Emitter-Base Voltage V -5.0 V EBO Continuous Collector Current -100 mA I C Peak Collector Current -200 mA I CM Peak Emitter Current -200 mA I EM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) P 200 mW D Thermal Resistance, Junction to Ambient (Note 6) R 625 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition BC856 -80 Collector-Base Breakdown Voltage BC857 BV -50 V I = -100nA CBO C BC858 -30 BC856 -65 Collector-Emitter Breakdown Voltage (Note 7) BC857 -45 V BV I = -10mA CEO C BC858 -30 Emitter-Base Breakdown Voltage BV -5 V I = -100nA EBO E A 125 180 250 DC Current Gain (Note 7) Current Gain Group B 220 290 475 h V = -5.0V, I = -2.0mA FE CE C C 420 520 800 -15 nA V = -30V CB Collector Cutoff Current I CBO -4 A V = -30V, T = +150C CB A -75 -300 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage (Note 7) V mV CE(sat) -250 -650 I = -100mA, I = -5.0mA C B -600 -650 -750 I = -2mA, V = -5V C CE Base-Emitter Turn-On Voltage (Note 7) V mV BE(on) -820 I = -10mA, V = -5V C CE -700 I = -10mA, I = -0.5mA C B Base-Emitter Saturation Voltage (Note 7) mV VBE(sat) -850 -950 I = -100mA, I = -5mA C B Output Capacitance C 3 4.5 pF V = -10V, f = 1.0MHz obo CB V = -5V, I = -10mA, CE C Transition Frequency 100 200 MHz f T f = 100MHz V = -5V, I = -200A CE C Noise Figure NF 10 dB R = 2k, f = 1kHz S f = 200Hz Notes: 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 7. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2% 2 of 5 November 2018 BC856AW BC858CW Diodes Incorporated www.diodes.com Document Number: DS30251 Rev. 11 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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