BCM846BS 65V NPN MATCHED PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Ultra-Small Surface Mount Package Case: SOT363 Current Gain Matching Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Base-Emitter Voltage Matching Moisture Sensitivity: Level 1 per J-STD-020 Ideally Suited for Automated Insertion Terminals: Finish Matte Tin Finish. Solderable per MIL-STD- For Switching and AF Amplifier Application 202, Method 208 e3 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.006 grams (Approximate) Halogen and Antimony Free.Gree Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT363 Device Schematic Top View Top View Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel BCM846BS-7 AEC-Q101 2K7 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See BCM846BS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 80 V V CBO Collector-Emitter Voltage 65 V V CEO Emitter-Base Voltage 6 V V EBO Collector Current I 100 mA C Peak Collector Current I 200 mA CM Peak Base Current I 200 mA BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient (Note 6) 625 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG ESD Ratings (Note 6) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic (Note 7) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BV 80 V I = 100A, I = 0 CBO C B Collector-Emitter Breakdown Voltage BV 65 V I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage BV 6 V I = 100A, I = 0 EBO E C DC Current Gain h 200 450 V = 5V, I = 2mA FE CE C DC Current Gain Matching h /h 0.9 1 1.1 V = 5V, I = 2mA FE1 FE2 CE C 100 IC = 10mA, IB = 0.5mA Collector-Emitter Saturation Voltage mV V CE(SAT) 400 I = 100mA, I = 5mA C B 755 mV I = 10mA, I = 0.5mA C B Base-Emitter Saturation Voltage VBE(SAT) 905 mV I = 100mA, I = 5mA C B Base-Emitter Voltage V 610 665 710 mV V = 5V, I = 2mA BE(ON) CE C V BE1(ON) - Base-Emitter Voltage Matching -2 2 mV VCE = 5V, IC = 2mA V BE2(ON) 15 nA V = 40V CB Collector-Cutoff Current I CBO 5 A V = 40V, T = +125C CB A Emitter-Cutoff Current I 20 nA V = 5V, I = 0 EBO EB C V = 5V, I = 10mA, CE C Gain Bandwidth Product 100 MHz f T f = 100MHz Collector-Base Capacitance 2 3 pF C V = 10V, f = 1MHz CBO CB Emitter-Base Capacitance 11 pF C V = 0.5V, f = 1MHz EBO EB Notes: 5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 BCM846BS September 2018 Diodes Incorporated www.diodes.com Document number: DS41262 Rev. 1 - 2