BCM857BS 45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BV > -45V CEO Case: SOT363 I = -100mA High Collector Current C Case Material: Molded Plastic, Green Molding Compound Pair of PNP Transistors That Are Intrinsically Matched (Note 1) UL Flammability Classification Rating 94V-0 10% Matching on Current Gain (h ) FE Moisture Sensitivity: Level 1 per J-STD-020 2mV Matching on Base-Emitter Voltage (V ) BE Terminals: Finish Matte Tin Finish. Solderable per e3 Fully Internally Isolated in a Small Surface Mount Package MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS compliant (Notes 2 & 3) Weight: 0.006 grams (approximate) Halogen and Antimony Free.Gree Device (Note 4) Qualified to AEC-Q101 for High Reliability SOT363 C1 C2 B2 B1 SOT363 E1 E2 Top View Top View Device Symbol Pin-Out Ordering Information (Note 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel BCM857BS-7-F AEC-Q101 M3W 7 8 3,000 Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 3. See BCM857BS Absolute Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current -100 mA I C Peak Collector Current -200 mA I CM Peak Base Current -200 mA I BM Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) Total Device P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 6) R 625 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic (Note 8) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = 100A, I = 0 CBO C B Collector-Emitter Breakdown Voltage -45 V BV I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage -5 V BV I = 100A, I = 0 EBO E C DC Current Gain 220 475 h V = -5.0V, I = -2.0mA FE CE C DC Current Gain matching (Note 9) h h 0.9 1 V = -5.0V, I = -2.0mA FE1/ FE2 CE C -100 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage V mV CE(sat) -400 I = -100mA, I = -5.0mA C B Base-Emitter Saturation Voltage V -700 mV I = -10mA, I = -0.5mA BE(sat) C B Base-Emitter Voltage -580 -665 -750 mV V V = -5.0V, I = -2.0mA BE(on) CE C V BE1(on) - Base-Emitter Voltage matching (Note 10) 2 mV V = -5.0V, I = -2.0mA CE C V BE2(on) Base-Emitter Voltage V -580 -665 -750 mV V = -5.0V, I = -2.0mA BE(on) CE C -15 nA V = -30V CB Collector-Cutoff Current I CBO -4.0 A V = -30V, T = +150C CB A Emitter Cutoff Current -100 nA I V = -5.0V, I = 0 EBO EB C V = -5.0V, I = -10mA, CE C Gain Bandwidth Product f 100 MHz T f = 100MHz Collector-Base Capacitance C 2 3 pF V = -10V, f = 1.0MHz CBO CB Emitter-Base Capacitance C 11 pF V = -0.5V, f = 1.0MHz EBO EB Notes: 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB the device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 8. Short duration pulse test used to minimize self-heating effect. 9. The smaller of the two values is taken as the numerator. 10. The smaller of the two values is subtracted from the larger value. 2 of 5 June 2014 BCM857BS Diodes Incorporated www.diodes.com Datasheet Number DS37299 Rev. 1 - 2