BCM857BV 45V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BV > -45V Case: SOT563 CEO I = -100mA High Collector Current Case Material: Molded Plastic, Green Molding Compound C Pair of PNP Transistors That Are Intrinsically Matched (Note 1) UL Flammability Classification Rating 94V-0 2% Matching on Current Gain (h ) Moisture Sensitivity: Level 1 per J-STD-020 FE 2mV Matching on Base-Emitter Voltage (V ) Terminals: Finish Matte Tin Annealed over Copper Leadframe BE Fully Internally Isolated in a Small Surface Mount Package Solderable per MIL-STD-202, Method 208 e3 Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3) Weight: 0.003 grams (Approximate) Halogen and Antimony Free.Gree Device (Note 4) Qualified to AEC-Q101 for High Reliability SOT563 C1 C2 B1 B2 E1 E2 Top View Top View Device Symbol Pin-Out Ordering Information (Note 5) Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel BCM857BV-7 AEC-Q101 1U5 7 8 3,000 Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 3. See BCM857BV Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current I -100 mA C Peak Collector Current -200 mA I CM Peak Base Current -200 mA I BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation. Total Device (Note 6) P 500 mW D Power Dissipation. Single Transistor (Note 7) P 357 mW D Thermal Resistance, Junction to Ambient Air (Note 6) R +250 C/W JA Thermal Resistance, Junction to Ambient Air (Note 7) +350 C/W RJA Operating and Storage Temperature Range -65 to +150 C T , T J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic (Note 9) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage B V -50 V I = 100A, I = 0 CBO C B Collector-Emitter Breakdown Voltage B V -45 V I = 10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage -5 V BV I = 100A, I = 0 EBO E C DC Current Gain 200 290 450 h V = -5.0V, I = -2.0mA FE CE C DC Current Gain Matching (Note 10) 0.98 1 h h V = -5.0V, I = -2.0mA FE1/ FE2 CE C -50 -200 I = -10mA, I = -0.5mA C B Collector-Emitter Saturation Voltage V mV CE(sat) -400 -200 I = -100mA, I = -5.0mA C B Base-Emitter Saturation Voltage V -760 mV I = -10mA, I = -0.5mA BE(sat) C B Base-Emitter Voltage V -600 -650 -700 mV V = -5.0V, I = -2.0mA BE(on) CE C V BE1(on) - Base-Emitter Voltage Matching (Note 11) 2 mV V = -5.0V, I = -2.0mA CE C V BE2(on) -15 nA V = -30V CB Collector Cut-Off Current I CBO -5.0 A V = -30V, T = +150C CB A Emitter Cut-Off Current I -100 nA V = -5.0V, I = 0 EBO EB C VCE = -5.0V, IC = -10mA, Gain Bandwidth Product f 100 175 MHz T f = 100MHz Collector-Base Capacitance 2.2 pF C V = -10V, f = 1.0MHz CBO CB Emitter-Base Capacitance C 10 pF V = -0.5V, f = 1.0MHz EBO EB Notes: 6. For a device with two active die running at equal power, mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB the device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6 except for only one active die running. 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Short duration pulse test used to minimize self-heating effect. 10. The smaller of the two values is taken as the numerator. 11. The smaller of the two values is subtracted from the larger value. 2 of 5 March 2015 BCM857BV Diodes Incorporated www.diodes.com Datasheet number: DS37433 Rev. 3 - 2 NEW PRODUCT