BCP5616Q 80V NPN MEDIUM POWER TRANSI STOR IN SOT223 Description Applications This Bipolar Junction Transistor (BJT) is designed to meet the Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. AF Driver and Output Stages Features Mechanical Data BV > 80V CEO Case: SOT223 I = 1A High Continuous Collector Current C Case Material: Molded Plastic, Green Molding Compound. I = 2A Peak Pulse Current CM UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturation Voltage V < 500mV 0.5A CE(SAT) Terminals: Finish Matte Tin Plated Leads. Complementary PNP Type: BCP5316Q Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen- and Antimony-Free. Green Device (Note 3) The BCP5616Q is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. BCP5616Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage 80 V VCEO Emitter-Base Voltage 5 V V EBO Continuous Collector Current 1 I C A Peak Pulse Collector Current 2 I CM Continuous Base Current 100 I B mA Peak Pulse Base Current I 200 BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 2 W D Thermal Resistance, Junction to Ambient (Note 5) R 62 C /W JA Thermal Resistance, Junction to Leads (Note 6) R 19.4 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady-state. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 November 2020 BCP5616Q Diodes Incorporated www.diodes.com Datasheet Number: DS36981 Rev. 4 - 2