X-On Electronics has gained recognition as a prominent supplier of BCV47QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCV47QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCV47QTA Diodes Incorporated

BCV47QTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.BCV47QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT General Purpose Transistor SOT23 T&R 3K
Datasheet: BCV47QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2508 ea
Line Total: USD 0.25 
Availability - 8314
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8314
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2508
10 : USD 0.1694
100 : USD 0.0891
1000 : USD 0.0825
3000 : USD 0.0649
9000 : USD 0.0594
24000 : USD 0.0594
45000 : USD 0.0561

   
Manufacturer
Product Category
Polarisation
Case
Mounting
Kind Of Package
Kind Of Transistor
Type Of Transistor
Frequency
Current Gain
Power Dissipation
Collector Current
Collector-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCV47QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCV47QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCV47Q 60V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT23 stringent requirements of automotive applications. Case Material: Molded Plastic, Green molding compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Features Terminals: Finish Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 BV > 60V CEO Weight 0.008 grams (Approximate) Darlington Transistor h > 10k 100mA for High Gain FE I = 500mA High Continuous Collector Current C Complementary Darlington PNP Type: BCV46 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT23 E C B Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel BCV47QTA Automotive ZFG 7 8 3,000 BCV47QTC Automotive ZFG 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BCV47Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 80 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage 10 V V EBO Continuous Collector Current 500 mA I C Peak Pulse Current 800 mA I CM Base Current 100 mA I B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 310 Power Dissipation mW PD (Note 7) 350 (Note 6) 403 Thermal Resistance, Junction to Ambient R C/W JA (Note 7) 357 Thermal Resistance, Junction to Leads (Note 8) 350 C/W R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 2,000 V 2 Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition the device is measured when operating in a steady-state condition. 7. Same as note (6), except the device is mounted on 15mm x 15mm FR4 PCB. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 BCV47Q November 2017 Diodes Incorporated www.diodes.com Document number: DS39807 Rev. 1 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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