SOT23 PNP SILICON PLANAR BCW68 MEDIUM POWER TRANSISTOR ISSUE 5 - MARCH 2001 PARTMARKING DETAILS BCW68F DF BCW68FR 7T E C BCW68G DG BCW68GR 5T BCW68H DH BCW68HR 7N B COMPLEMENTARY TYPES BCW66 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage V -60 V CES Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current(10ms) I -1000 mA CM Continuous Collector Current I -800 mA C Base Current I -100 mA B Power Dissipation at T =25C P 330 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg TBABCW68 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Emitter V -45 V I =-10mA (BR)CEO CEO Breakdown Voltage V -60 IC=-10 A (BR)CES Emitter-Base Breakdown Voltage V -5 V I =-10 A (BR)EBO EBO Collector-Emitter I -20 nA V =-45V CES CES Cut-off Current -10 A V =-45V, T =150C CES amb Emitter-Base Cut-Off Current I -20 nA V =-4V EBO EBO Collector-Emitter Saturation V -0.3 V I =-100mA, I = -10mA CE(sat) C B Voltage -0.7 V I = -500mA, I =-50mA* C B Base-Emitter Saturation Voltage V -2 V I =-500mA,I =-50mA* BE(sat) C B Static BCW68F h 100 170 250 I =-100mA, V =-1V* FE C CE Forward 35 I =-500mA, V =-2V* C CE Current Transfer BCW68G h 160 250 400 I =-100mA, V =-1V* FE C CE 60 I =-500mA, V =-2V* C CE BCW68H h 250 350 630 I =-100mA, V =-1V* FE C CE 100 I =-500mA, V =-2V* C CE Transition Frequency f 100 MHz I =-20mA, V =-10V T C CE f = 100MHz Output Capacitance C 12 18 pF V =-10V, f =1MHz obo CB Input Capacitance C 80 pF V =-0.5V, f =1MHz ibo EB Noise Figure N 2 10 dB I = -0.2mA, V =- 5V C CE R =1K, f=1KH G f=200Hz Switching times: Turn-On Time t 100 ns I =-150mA on C Turn-Off Time t 400 ns I =- I =-15mA off B1 B2 R =150 L Spice parameter data is available upon request for this device *Measured under pulsed conditions. TBA