VBE(sat) - (Volts) VCE(sat) - (Volts) hFE - Normalised Gain NPN SILICON PLANAR MEDIUM BCX38A/B/C BCX38A/B/C POWER DARLINGTON TRANSISTORS ISSUE 1 MARCH 94 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * Gain of 10K at I =0.5 Amp C *P =1 Watt VCE=5V IC/IB=100 tot 1.0 1.6 +100C 1.4 -55C C 0.8 1.2 B E 1.0 +25C +25C 0.6 0.8 E-Line +100C 0.6 TO92 Compatible 0.4 +175C 0.4 -55C ABSOLUTE MAXIMUM RATINGS. 0.2 PARAMETER SYMBOL VALUE UNIT 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector-Base Voltage V 80 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 60 V CEO CE(sat) C V v I hFE v IC Emitter-Base Voltage V 10 V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 800 mA C VCE=5V IC/IB=100 Power Dissipation at T =25C P 1W amb tot 2.0 2.0 Operating and Storage Temperature Range T :T -55 to +200 C j stg -55C 1.5 -55C 1.5 ELECTRICAL CHARACTERISTICS (at T = 25C). amb +25C +25C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. +100C 1.0 1.0 +100C Collector-Base V 80 V I =10A, I =0 (BR)CBO C E +175C Breakdown Voltage 0.5 +175C Collector-Emitter V 60 V I =10mA, I =0 0.5 CEO(sus) C B 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Sustaining Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base V 10 V I =10A, I =0 (BR)EBO E C BE(sat) C V v I Breakdown Voltage VBE(on) v IC Collector Cut-Off I 100 nA V =60V, I =0 CBO CB E Single Pulse Test at Tamb=25C 10 Current D=1 (D.C.) 150 Emitter Cut-Off I 100 nA V =8V, I =0 EBO EB C Current 1 Collector-Emitter V 1.25 V I =800mA, I =8mA* 100 CE(sat) C B D=0.5 Saturation Voltage Base-Emitter V 1.8 V I =800mA, V =5V* BE(on) C CE D.C. 50 Turn-on Voltage 1s D=0.2 0.1 100ms 10ms Static BCX38A h 500 I =100mA, V =5V* D=0.1 FE C CE 1.0ms D=0.05 0.1ms Forward 1000 I =500mA, V =5V* Single Pulse C CE 0 Current 0.0001 0.001 0.01 0.1 1 10 100 BCX38B 2000 I =100mA, V =5V* C CE Transfer Pulse Width (seconds) 0.01 4000 I =500mA, V =5V* C CE Ratio 1110 100000 VCE - Collector Voltage (Volts) BCX38C 5000 I =100mA, V =5V* Maximum transient thermal impedance C CE 10000 I =500mA, V =5V* C CE Safe Operating Area 3-21 3-20 VBE - (Volts) Thermal Resistance (C/W) IC - Collector Current (Amps) VBE(sat) - (Volts) VCE(sat) - (Volts) hFE - Normalised Gain NPN SILICON PLANAR MEDIUM BCX38A/B/C BCX38A/B/C POWER DARLINGTON TRANSISTORS ISSUE 1 MARCH 94 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * Gain of 10K at I =0.5 Amp C *P =1 Watt VCE=5V IC/IB=100 tot 1.0 1.6 +100C 1.4 -55C C 0.8 1.2 B E 1.0 +25C +25C 0.6 0.8 E-Line +100C 0.6 TO92 Compatible 0.4 +175C 0.4 -55C ABSOLUTE MAXIMUM RATINGS. 0.2 PARAMETER SYMBOL VALUE UNIT 0.2 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Collector-Base Voltage V 80 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V 60 V CEO CE(sat) C V v I hFE v IC Emitter-Base Voltage V 10 V EBO Peak Pulse Current I 2A CM Continuous Collector Current I 800 mA C VCE=5V IC/IB=100 Power Dissipation at T =25C P 1W amb tot 2.0 2.0 Operating and Storage Temperature Range T :T -55 to +200 C j stg -55C 1.5 -55C 1.5 ELECTRICAL CHARACTERISTICS (at T = 25C). amb +25C +25C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. +100C 1.0 1.0 +100C Collector-Base V 80 V I =10A, I =0 (BR)CBO C E +175C Breakdown Voltage 0.5 +175C Collector-Emitter V 60 V I =10mA, I =0 0.5 CEO(sus) C B 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 Sustaining Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base V 10 V I =10A, I =0 (BR)EBO E C BE(sat) C V v I Breakdown Voltage VBE(on) v IC Collector Cut-Off I 100 nA V =60V, I =0 CBO CB E Single Pulse Test at Tamb=25C 10 Current D=1 (D.C.) 150 Emitter Cut-Off I 100 nA V =8V, I =0 EBO EB C Current 1 Collector-Emitter V 1.25 V I =800mA, I =8mA* 100 CE(sat) C B D=0.5 Saturation Voltage Base-Emitter V 1.8 V I =800mA, V =5V* BE(on) C CE D.C. 50 Turn-on Voltage 1s D=0.2 0.1 100ms 10ms Static BCX38A h 500 I =100mA, V =5V* D=0.1 FE C CE 1.0ms D=0.05 0.1ms Forward 1000 I =500mA, V =5V* Single Pulse C CE 0 Current 0.0001 0.001 0.01 0.1 1 10 100 BCX38B 2000 I =100mA, V =5V* C CE Transfer Pulse Width (seconds) 0.01 4000 I =500mA, V =5V* C CE Ratio 1110 100000 VCE - Collector Voltage (Volts) BCX38C 5000 I =100mA, V =5V* Maximum transient thermal impedance C CE 10000 I =500mA, V =5V* C CE Safe Operating Area 3-21 3-20 VBE - (Volts) Thermal Resistance (C/W) IC - Collector Current (Amps)