X-On Electronics has gained recognition as a prominent supplier of BCX5616QTA Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCX5616QTA Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCX5616QTA Diodes Incorporated

BCX5616QTA electronic component of Diodes Incorporated
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See Product Specifications
Part No.BCX5616QTA
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 80 V 1 A 150MHz 2 W Surface Mount SOT-89-3
Datasheet: BCX5616QTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.0667 ea
Line Total: USD 66.7 
Availability - 260930
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
260930
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.0667
3000 : USD 0.0667
5000 : USD 0.0667
20000 : USD 0.0667
30000 : USD 0.0667

1368
Ship by Wed. 11 Dec to Mon. 16 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1198
50 : USD 0.0973
150 : USD 0.0851
1000 : USD 0.0776
2000 : USD 0.0711
5000 : USD 0.0678

10904
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2794
10 : USD 0.1936
100 : USD 0.1133
1000 : USD 0.0935
2000 : USD 0.0825
100000 : USD 0.0803

1222
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.3122
50 : USD 0.2128
100 : USD 0.1792
168 : USD 0.1008

97970
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.1083
2000 : USD 0.0885
3000 : USD 0.0791
5000 : USD 0.0777

2599600
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 2000
Multiples : 1000
2000 : USD 0.0975

156
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 161
Multiples : 1
161 : USD 0.1646

354050
Ship by Wed. 04 Dec to Tue. 10 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.1111
2000 : USD 0.0907
3000 : USD 0.0811
5000 : USD 0.0798

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Packaging
Brand
Collector Current Dc
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Frequency
Power Dissipation
Operating Temp Range
Package Type
Pin Count
Number Of Elements
Dc Current Gain
Operating Temperature Classification
Category
Rad Hardened
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCX5616QTA from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCX5616QTA and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCX5616Q 80V NPN MEDIUM POWER TRANSI STORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor (BJT) is designed to meet the Case: SOT89 stringent requirements of Automotive Applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Leads, Solderable per MIL-STD-202 Method 208 Weight: 0.055 grams (Approximate) Features Applications BV > 80V Automotive CEO I = 1A High Continuous Collector Current Medium Power Switching or Amplification Applications c I = 2.0A Peak Pulse Current AF Driver and Output Stages CM Low Saturation Voltage V < 500mV 0.5A CE(sat) Epitaxial Planar Die Construction Complementary PNP types: BCX5316Q Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. Green Device (Note 3) The BCX5616Q is suitable for automotive applications requiring specific change control this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. BCX5616Q Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage 80 V VCEO Emitter-Base Voltage 6 V V EBO Continuous Collector Current 1 I C A Peak Pulse Collector Current 2.0 I CM Continuous Base Current 100 I B mA Peak Pulse Base Current I 200 BM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 1 Power Dissipation (Note 6) P 1.5 W D (Note 7) 2.0 (Note 5) 125 Thermal Resistance, Junction to Ambient Air (Note 6) 83 C/W R JA (Note 7) 60 Thermal Resistance, Junction to Lead (Note 8) R 13 C/W JL Operating and Storage Temperature Range T T -55 to +150 C J, STG ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper. 7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 November 2020 BCX5616Q Diodes Incorporated www.diodes.com Datasheet number: DS37024 Rev. 3 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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