BS870Q-7-F Diodes Incorporated

BS870Q N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D BV R max DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 60V 5 V = 10V 250mA GS Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Mechanical Data PPAP and is ideal for use in: Case: SOT23 Engine Management Systems Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Body Control Electronics Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate) SOT23 D D G G S S Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging BS870Q-7-F SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See BS870Q Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady Continuous Drain Current (Note 6) V = 4.5V T = +25C I 250 mA GS A D State Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 6) P 300 mW D Thermal Resistance, Junction to Ambient (Note 6) Steady State R 417 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 25V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 15V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 2.0 3.0 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 3.5 5.0 R V = 10V, I = 0.2A DS(ON) GS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 22 50 C iss V = 10V, V = 0V DS GS Output Capacitance 11 25 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.0 5.0 C rss Turn-On Delay Time t 2.0 20 V = 10V, R = 150, D(ON) ES L ns Turn-Off Delay Time t 5.0 20 V = 10V, R = 100 D(OFF) DS D Notes: 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown in Diodes Incorporateds package outline PDFs, which can be found on our website at