X-On Electronics has gained recognition as a prominent supplier of BSN20-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. BSN20-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

BSN20-7 Diodes Incorporated

BSN20-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.BSN20-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60 41V-60V,SOT23,3K
Datasheet: BSN20-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0442 ea
Line Total: USD 132.6 
Availability - 14550
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
14550
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.0442
9000 : USD 0.0432
15000 : USD 0.0426
60000 : USD 0.0414
90000 : USD 0.0406

3574
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0872
100 : USD 0.0741
300 : USD 0.0675
3000 : USD 0.0625
6000 : USD 0.0586
9000 : USD 0.0567

7049
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.364
10 : USD 0.2744
25 : USD 0.2145
50 : USD 0.1713
100 : USD 0.1365
228 : USD 0.075
626 : USD 0.071
1500 : USD 0.0683

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the BSN20-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSN20-7 and other electronic components in the MOSFETs category and beyond.

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BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits I Low On-Resistance D V R (BR)DSS DS(ON) T = +25C A Low Input Capacitance 500mA 1.8 V = 10V GS Fast Switching Speed 50V 2.0 V = 4.5V 450mA GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- PPAP Capable (Note 4) state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT23 Case Material: Molded Plastic Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Power Management Functions (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Source Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Qualification Case Packaging BSN20-7 Standard SOT23 3000/Tape & Reel BSN20Q-7 Automotive SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BSN20 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 50 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current Steady T = +25C 500 A mA I D T = +25C (Note 6) State 300 SP T = +100C A 1.2 A Pulsed Drain Current T = +25C (Notes 6 & 7) I SP DM Thermal Characteristics Characteristic Symbol Value Units Power Dissipation, T = +25C (Note 6) P 600 mW A D 200 Thermal Resistance, Junction to Ambient T = +25C (Note 6) R C/W A JA Power Dissipation, T = +25C (Note 6) P 920 mW SP D 136 C/W Thermal Resistance, T = +25C (Note 6) R SP JSP Operating and Storage Temperature Range T , T -55 to +150 C J STG . Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 0.5 A V = 50V, V = 0V J DSS DS GS Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.4 1.0 1.5 V V = V , I = 250A V GS(th) DS GS D 1.3 1.8 V = 10V, I = 0.22A GS D Static Drain-Source On-Resistance R DS(ON) 1.6 2.0 V = 4.5V, I = 0.1A GS D Forward Transfer Admittance Y 40 320 mS V = 10V, I = 0.1A fs DS D Diode Forward Voltage V 1.0 1.5 V V = 0V, I = 180mA SD GS S Source (diode forward) Current I 194 mA T = +25C S SP Peak Source (diode forward) Current I 1.2 A T = +25C (Notes 3 & 4) SM SP DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 21.8 40 pF iss Output Capacitance C 5.6 15 pF V = 10V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 3.3 10 pF rss Gate Resistance R 49 V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 800 pC g V = 10V, V = 25V, GS DD Gate-Source Charge Q 100 pC gs I = 250mA D Gate-Drain Charge Q 100 pC gd Turn-On Delay Time t 2.93 ns D(on) V = 30V, V = 10V, DD GEN Turn-On Rise Time t 2.99 ns r R = 150 , R = 50 , L GEN Turn-Off Delay Time t 9.45 ns D(off) I = 0.2A D Turn-Off Fall Time t 8.3 ns f Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 September 2013 BSN20 Diodes Incorporated www.diodes.com Document number: DS31898 Rev. 8 - 2 NEW PRODUCT

Tariff Desc

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