BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits I Low On-Resistance D V R (BR)DSS DS(ON) T = +25C A Low Input Capacitance 500mA 1.8 V = 10V GS Fast Switching Speed 50V 2.0 V = 4.5V 450mA GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the on- PPAP Capable (Note 4) state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Mechanical Data applications. Case: SOT23 Case Material: Molded Plastic Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Power Management Functions (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G Source Top View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Qualification Case Packaging BSN20-7 Standard SOT23 3000/Tape & Reel BSN20Q-7 Automotive SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BSN20 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 50 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current Steady T = +25C 500 A mA I D T = +25C (Note 6) State 300 SP T = +100C A 1.2 A Pulsed Drain Current T = +25C (Notes 6 & 7) I SP DM Thermal Characteristics Characteristic Symbol Value Units Power Dissipation, T = +25C (Note 6) P 600 mW A D 200 Thermal Resistance, Junction to Ambient T = +25C (Note 6) R C/W A JA Power Dissipation, T = +25C (Note 6) P 920 mW SP D 136 C/W Thermal Resistance, T = +25C (Note 6) R SP JSP Operating and Storage Temperature Range T , T -55 to +150 C J STG . Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 50 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 0.5 A V = 50V, V = 0V J DSS DS GS Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.4 1.0 1.5 V V = V , I = 250A V GS(th) DS GS D 1.3 1.8 V = 10V, I = 0.22A GS D Static Drain-Source On-Resistance R DS(ON) 1.6 2.0 V = 4.5V, I = 0.1A GS D Forward Transfer Admittance Y 40 320 mS V = 10V, I = 0.1A fs DS D Diode Forward Voltage V 1.0 1.5 V V = 0V, I = 180mA SD GS S Source (diode forward) Current I 194 mA T = +25C S SP Peak Source (diode forward) Current I 1.2 A T = +25C (Notes 3 & 4) SM SP DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 21.8 40 pF iss Output Capacitance C 5.6 15 pF V = 10V, V = 0V, f = 1.0MHz oss DS GS Reverse Transfer Capacitance C 3.3 10 pF rss Gate Resistance R 49 V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 800 pC g V = 10V, V = 25V, GS DD Gate-Source Charge Q 100 pC gs I = 250mA D Gate-Drain Charge Q 100 pC gd Turn-On Delay Time t 2.93 ns D(on) V = 30V, V = 10V, DD GEN Turn-On Rise Time t 2.99 ns r R = 150 , R = 50 , L GEN Turn-Off Delay Time t 9.45 ns D(off) I = 0.2A D Turn-Off Fall Time t 8.3 ns f Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 6 September 2013 BSN20 Diodes Incorporated www.diodes.com Document number: DS31898 Rev. 8 - 2 NEW PRODUCT