BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features I Low Input Capacitance D BV R Package DSS DS(ON) T = +25C A High BV Rating for Power Application DSS SC59 Low Input/Output Leakage 600V 70mA 160 V = 10V GS SOT23 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q101, PPAP capable, and This new generation uses advanced planar technology MOSFET, manufactured in IATF 16949 certified facilities), please refer provide excellent high voltage and fast switching, making it ideal for to the related automotive grade (Q-suffix) part. A listing can small-signal and level shift applications. be found at BSS127 Marking Information SOT23 SC59 K28 = Product Type Marking Code K29 = Product Type Marking Code YM = Date Code Marking YM = Date Code Marking K29 K28 Y = Year (ex: D = 2016) Y = Year (ex: D = 2016) M = Month (ex: 9 = September) M = Month (ex: 9 = September) Date Code Key Year 2013 2014 2015 2016 2017 2018 2019 Code A B C D E F G Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 600 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 50 A Continuous Drain Current (Note 5) V = 10V I mA GS D State 40 T = +70C A T = +25C Steady A 70 mA Continuous Drain Current (Note 6) V = 10V I GS D State 55 T = +70C A Steady T = +25C 45 A Continuous Drain Current (Note 5) V = 5V I mA GS D State 35 T = +70C A Steady T = +25C 65 A mA Continuous Drain Current (Note 6) V = 5V I GS D State 50 T = +70C A 0.16 A Pulsed Drain Current T = +25C (Note 7) I SP DM Thermal Characteristics Characteristic Symbol Value Unit 0.61 W Power Dissipation, T = +25C (Note 5) P A D 204 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Power Dissipation, T = +25C (Note 6) P 1.25 W A D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 100 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature, 10s pulse, duty cycle = 1%. 2 of 7 BSS127 October 2019 Diodes Incorporated www.diodes.com Document number: DS35476 Rev. 8 - 2 YM YM