BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device BV R DSS DS(ON) Max Low Gate Threshold Voltage T = +25C A Q1 60V 115mA Low Input Capacitance 13.5 V = 10V GS Fast Switching Speed Q2 -50V 10 V = -5V -130mA GS Low Input/Output Leakage Complementary Pair Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it Qualified to AEC-Q101 Standards for High Reliability DS(ON) ideal for high efficiency power management applications. PPAP Capable (Note 4) Applications Mechanical Data General Purpose Interfacing Switch Case: SOT363 Power Management Functions Case Material: Molded Plastic. Green Molding Compound. UL Analog Switch Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D G S 1 2 2 Q Q 1 2 S G D 1 1 2 Top View Top View Internal Schematic Ordering Information (Note 5) Part Number Compliance Case Packaging BSS8402DW-7-F Standard SOT363 3,000/Tape & Reel BSS8402DW-13-F Standard SOT363 10,000/Tape & Reel BSS8402DWQ-7 Automotive SOT363 3,000/Tape & Reel BSS8402DWQ-13 Automotive SOT363 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See BSS8402DW Maximum Ratings Total Device ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 6) 200 mW P D Thermal Resistance, Junction to Ambient 625 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Maximum Ratings N-CHANNEL Q , 2N7002 Section ( T = +25C, unless otherwise specified.) A 1 Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Drain-Gate Voltage R 1.0M V 60 V GS DGR Gate-Source Voltage Continuous 20 V V GSS Pulsed 40 Drain Current (Note 6) Continuous 115 Continuous +100C I 73 mA D Pulsed 800 Maximum Ratings P-CHANNEL Q , BSS84 Section ( T = +25C, unless otherwise specified.) A 2 Characteristic Symbol Value Unit Drain-Source Voltage V -50 V DSS Drain-Gate Voltage R 20K V -50 V GS DGR Gate-Source Voltage Continuous V 20 V GSS Drain Current (Note 6) Continuous -130 mA I D Note: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Incorporateds suggested pad layout document, which can be found on our website at