BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I Low On-Resistance
D
V R
(BR)DSS DS(on) max
T = +25C
A
Low Gate Threshold Voltage
-50V 10 @ V = -5V -130mA
GS
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Description
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This MOSFET has been designed to minimize the on-state resistance
Halogen and Antimony Free. Green Device (Note 3)
(R ) and yet maintain superior switching performance, making it
DS(on)
Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: SOT23
General Purpose Interfacing Switch
Case Material: UL Flammability Classification Rating 94V-0
Power Management Functions
Moisture Sensitivity: Level 1 per J-STD-020
Analog Switch
Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Top View Equivalent Circuit Top View
Ordering Information (Note 4)
Part Number Qualification Case Packaging
BSS84-7-F Commercial SOT23 3000/Tape & Reel
BSS84Q-7-F Automotive SOT23 3000/Tape & Reel
BSS84-13-F Commercial SOT23 10000/Tape & Reel
BSS84Q-13-F Automotive SOT23 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
BSS84
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V -50 V
DSS
Drain-Gate Voltage R 20K V -50 V
GS DGR
Gate-Source Voltage Continuous V 20 V
GSS
Drain Current (Note 5) Continuous I -130 mA
D
Pulsed Drain Current I -1.2 A
DM
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P 300 mW
D
Thermal Resistance, Junction to Ambient 417
R C/W
JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic SymbolMin Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV -50 V V = 0V, I = -250A
DSS GS D
V = -50V, V = 0V, T = +25C
-1 A DS GS J
Zero Gate Voltage Drain Current I -2 A V = -50V, V = 0V, T = +125C
DSS DS GS J
-100 nA
V = -25V, V = 0V, T = +25C
DS GS J
Gate-Body Leakage
I 10 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V -0.8 -2.0 V V = V , I = -1mA
GS(th) DS GS D
Static Drain-Source On-Resistance R 10 V = -5V, I = -0.100A
DS (ON) GS D
Forward Transconductance g 0.05 S V = -25V, I = -0.1A
FS DS D
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance C 45 pF
iss
Output Capacitance C 25 pF V = -25V, V = 0V, f = 1.0MHz
oss DS GS
Reverse Transfer Capacitance C 12 pF
rss
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time t 10 ns
D(ON) V = -30V, I = -0.27A,
DD D
Turn-Off Delay Time 18 ns R = 50 , V = -10V
t GEN GS
D(OFF)
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at