CTA2N1P COMPLEX TRANSISTOR ARRAY Features A Combines MMBT4401 type transistor with BSS84 type SOT-363 MOSFET Dim Min Max Small Surface Mount Package A 0.10 0.30 PNP/N-Channel Complement Available: CTA2P1N C A03 B B 1.15 1.35 Lead Free/RoHS Compliant (Note 2) C 2.00 2.20 Gree Device (Note 3 and 4) D 0.65 Nominal F 0.30 0.40 H Mechanical Data H 1.80 2.20 K Case: SOT-363 M J 0.10 Case Material: Molded Plastic. UL Flammability K 0.90 1.00 Classification Rating 94V-0 J L 0.25 0.40 Moisture Sensitivity: Level 1 per J-STD-020C D F L M 0.10 0.25 Terminals: Solderable per MIL-STD-202, Method 208 0 8 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 C G Q1 S Q2 Q2 leadframe). All Dimensions in mm Terminal Connections: See Diagram Q1 Marking Information: A03, See Page 6 Ordering Information: See Page 6 Q2 Weight: 0.006 grams (approximate) E B D Q1 Q1 Q2 Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 1) 150 mW P d Thermal Resistance, Junction to Ambient (Note 1) R 833 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Maximum Ratings, Q1, MMBT4401 NPN Transistor Element T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage 6.0 V V EBO Collector Current - Continuous 600 mA I C Maximum Ratings, Q2, BSS84 P-Channel MOSFET Element T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V -50 V DSS Drain-Gate Voltage R 1.0M V -50 V GS DGR Gate-Source Voltage Continuous V 20 V GSS Drain Current Continuous I -130 mA D Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics, Q1, MMBT4401 NPN Transistor Element T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V 60 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 40 V V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 6.0 V V I = 100A, I = 0 (BR)EBO E C Collector Cutoff Current 100 nA I V = 35V, V = 0.4V CEX CE EB(OFF) Base Cutoff Current I 100 nA V = 35V, V = 0.4V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = 100A, V = 1.0V C CE 20 I = 1.0mA, V = 1.0V 40 C CE DC Current Gain 80 h I = 10mA, V = 1.0V FE C CE 100 300 I = 150mA, V = 1.0V C CE 40 I = 500mA, V = 2.0V C CE 0.40 I = 150mA, I = 15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.75 I = 500mA, I = 50mA C B 0.75 I = 150mA, I = 15mA 0.95 C B Base-Emitter Saturation Voltage V V BE(SAT) 1.2 I = 500mA, I = 50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 6.5 pF V = 5.0V, f = 1.0MHz, I = 0 cb CB E Input Capacitance C 30 pF V = 0.5V, f = 1.0MHz, I = 0 eb EB C Input Impedance h 1.0 15 k ie -4 Voltage Feedback Ratio 0.1 8.0 x 10 h re V = 10V, I = 1.0mA, CE C f = 1.0kHz Small Signal Current Gain 40 500 h fe Output Admittance 1.0 30 S h oe V = 10V, I = 20mA, CE C Current Gain-Bandwidth Product f 250 MHz T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 15 ns d V = 30V, I = 150mA, CC C V = 2.0V, I = 15mA Rise Time t 20 ns BE(off) B1 r Storage Time 225 ns t s V = 30V, I = 150mA, CC C I = I = 15mA Fall Time 30 ns B1 B2 t f Electrical Characteristics, Q2, BSS84 P-Channel MOSFET Element T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV -50 V V = 0V, I = -250A DSS GS D V = -50V, V = 0V, T = 25C A DS GS J -15 Zero Gate Voltage Drain Current I -60 A V = -50V, V = 0V, T = 125C DSS DS GS J -100 nA V = -25V, V = 0V, T = 25C DS GS J Gate-Body Leakage nA I 10 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V -0.8 -2.0 V V = V , I = -1mA GS(th) DS GS D Static Drain-Source On-Resistance R 10 V = -5V, I = 0.100A DS (ON) GS D Forward Transconductance g .05 S V = -25V, I = 0.1A FS DS D DYNAMIC CHARACTERISTICS Input Capacitance C 45 pF iss V = -25V, V = 0V DS GS Output Capacitance C 25 pF oss f = 1.0MHz Reverse Transfer Capacitance C 12 pF rss SWITCHING CHARACTERISTICS Turn-On Delay Time 10 ns t D(ON) V = -30V, I = -0.27A, DD D R = 50, V = -10V Turn-Off Delay Time 18 ns GEN GS t D(OFF) Notes: 5. Short duration pulse test used to minimize self-heating effect. CTA2N1P DS30295 Rev. 7 - 2 2 of 6 Diodes Incorporated www.diodes.com NEW PRODUCT