CTA2P1NCTA2P1N COMPLEX TRANSISTOR ARRAY Features A Combines MMBT4403 type transistor with 2N7002 type SOT-363 MOSFET Dim Min Max Small Surface Mount Package A 0.10 0.30 B 1.15 1.35 NPN/P-Channel Complement Available: CTA2N1P B C C 2.00 2.20 Lead Free/RoHS Compliant (Note 1) D 0.65 Nominal Gree Device (Note 3 and 4) F 0.30 0.40 H 1.80 2.20 Mechanical Data H J 0.10 Case: SOT-363 K 0.90 1.00 K Case Material: Molded Plastic. UL Flammability M L 0.25 0.40 Classification Rating 94V-0 M 0.10 0.25 Moisture Sensitivity: Level 1 per J-STD-020C 0 8 J D F L Terminals: Solderable per MIL-STD-202, Method 208 All Dimensions in mm C G S Lead Free Plating (Matte Tin Finish annealed over Alloy 42 Q1 Q2 Q2 leadframe). Q1 Terminal Connections: See Diagram Marking Information: A80, See Page 5 Q2 Ordering Information: See Page 5 E B D Q1 Q1 Q2 Weight: 0.006 grams (approximate) Maximum Ratings, Total Device T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 2) P 150 mW d Thermal Resistance, Junction to Ambient (Note 2) 833 C/W R JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Maximum Ratings, Q1, MMBT4403 PNP Transistor Element T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage V -40 V CEO Emitter-Base Voltage V -5.0 V EBO Collector Current - Continuous I -600 mA C Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Drain-Gate Voltage R 1.0M V 60 V GS DGR Gate-Source Voltage Continuous 20 V V GSS Pulsed 40 Drain Current (Note 2) Continuous 115 Continuous 100C 73 mA I D Pulsed 800 Notes: 1. No purposefully added lead. 2. Device mounted on FR-4 PCB pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -40 V V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -40 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V -5.0 V I = -100A, I = 0 (BR)EBO E C Collector Cutoff Current I -100 nA V = -35V, V = -0.4V CEX CE EB(OFF) Base Cutoff Current I -100 nA V = -35V, V = -0.4V BL CE EB(OFF) ON CHARACTERISTICS (Note 5) I = -100A, V = -1.0V C CE 30 I = -1.0mA, V = -1.0V 60 C CE DC Current Gain h 100 I = -10mA, V = -1.0V FE C CE 100 300 I = -150mA, V = -2.0V C CE 20 I = -500mA, V = -2.0V C CE -0.40 I = -150mA, I = -15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.75 I = -500mA, I = -50mA C B -0.75 -0.95 I = -150mA, I = -15mA C B Base-Emitter Saturation Voltage V V BE(SAT) -1.30 I = -500mA, I = -50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8.5 pF V = -10V, f = 1.0MHz, I = 0 cb CB E Input Capacitance 30 pF C V = -0.5V, f = 1.0MHz, I = 0 eb EB C Input Impedance 1.5 15 h k ie -4 Voltage Feedback Ratio 0.1 8.0 x 10 h re V = -10V, I = -1.0mA, CE C f = 1.0kHz Small Signal Current Gain h 60 500 fe Output Admittance h 1.0 100 S oe V = -10V, I = -20mA, CE C Current Gain-Bandwidth Product 200 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Delay Time 15 ns t d V = -30V, I = -150mA, CC C V = -2.0V, I = -15mA Rise Time 20 ns BE(off) B1 t r Storage Time t 225 ns s V = -30V, I = -150mA, CC C I = I = -15mA Fall Time t 30 ns B1 B2 f Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 60 70 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current T = 25C 1.0 C I A V = 60V, V = 0V DSS DS GS 500 T = 125C C Gate-Body Leakage I 10 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage 1.0 2.0 V V V = V , I =-250A GS(th) DS GS D Static Drain-Source On-Resistance T = 25C 3.2 7.5 V = 5.0V, I = 0.05A j GS D R DS (ON) 4.4 13.5 T = 125C j V = 10V, I = 0.5A GS D On-State Drain Current I 0.5 1.0 A V = 10V, V = 7.5V D(ON) GS DS Forward Transconductance g 80 mS V =10V, I = 0.2A FS DS D DYNAMIC CHARACTERISTICS Input Capacitance 22 50 pF C iss V = 25V, V = 0V DS GS Output Capacitance 11 25 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.0 5.0 pF C rss SWITCHING CHARACTERISTICS Turn-On Delay Time 7.0 20 ns t D(ON) V = 30V, I = 0.2A, DD D R = 150, V = 10V, R = 25 L GEN GEN Turn-Off Delay Time t 11 20 ns D(OFF) Notes: 5. Short duration pulse test used to minimize self-heating effect. DS30296 Rev. 9 - 2 2 of 5 CTA2P1N Diodes Incorporated www.diodes.com NEW PRODUCT