DCP51/-16DCP51/-16 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary NPN Type Available (DCP54) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications 4 Lead Free By Design/RoHS Compliant (Note 1) Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR Case: SOT-223 2,4 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 1 Terminals: Finish Matte Tin annealed over Copper leadframe BASE (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Terminal Connections: See Diagram EMITTER TOP VIEW Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -45 V CBO Collector-Emitter Voltage V -45 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current -1.5 A I CM Continuous Collector Current -1 A I C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation T = 25C (Note 3) P 1 (Note 3) W A d Operating and Storage Temperature Range -55 to +150 T T C j, STG Thermal Resistance Junction to Ambient Air T = 25C (Note 3) 125 C/W A R JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -45 V I = -100A, I = 0A (BR)CBO C E Collector-Emitter Breakdown Voltage V -45 V I = -10mA, I = 0A (BR)CEO C B Emitter-Base Breakdown Voltage V -5 V I = -10A, I = 0A (BR)EBO E C -100 nA V = -30V, I = 0A CB E Collector Cut-Off Current I CBO -10 A V = - 30V, I = 0A, T = 150C CB E A Emitter Cut-Off Current I -10 A V = -5V, I = 0A EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage -0.5 V V I = -500mA, I = -50mA CE(SAT) C B Base-Emitter Turn-On Voltage V -1.0 V I = -500mA, V = -2V BE(ON) C CE 40 250 I = -150mA, V = -2V C CE h FE DC Current Gain 25 I = -500mA, V = -2V C CE DCP51-16 100 250 I = -150mA, V = -2V C CE SMALL SIGNAL CHARACTERISTICS I = -50mA, V = -5V, C CE Transition Frequency 200 MHz f T f = 100MHz Note: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) DS31196 Rev. 2 - 2 2 of 4 DCP51/-16 Diodes Incorporated www.diodes.com NEW PRODUCT P , POWER DISSIPATION (W) D