Not Recommended for New Design Alternative is BCP52 & BCP5216 DCP52/-16 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary NPN Type Available (DCP55) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data Case: SOT-223 COLLECTOR Case Material: Molded Plastic, Green Molding Compound. UL 2,4 Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish Matte Tin annealed over Copper leadframe 1 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 BASE Terminal Connections: See Diagram 3 EMITTER Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 TOP VIEW Weight: 0.115 grams (approximate) Schematic and Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -60 V CBO Collector-Emitter Voltage -60 V V CEO Emitter-Base Voltage -5 V V EBO Peak Pulse Current I -1.5 A CM Continuous Collector Current I -1 A C Thermal Characteristics Characteristic Symbol Value Unit 1 (Note 3) W Power Dissipation T = 25C P A d 2 (Note 4) Operating and Storage Temperature Range T T -55 to +150 C j, STG 125 Thermal Resistance Junction to Ambient Air T = 25C (Note 3) R C/W A JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage -60 V V I = -100A, I = 0A (BR)CBO C E Collector-Emitter Breakdown Voltage -60 V V I = -10mA, I = 0A (BR)CEO C B Emitter-Base Breakdown Voltage -5 V V I = -10A, I = 0A (BR)EBO E C nA V = -30V, I = 0A -100 CB E Collector Cut-Off Current I CBO -20 A V = - 30V, I = 0A, T = 150C CB E A Emitter Cut-Off Current -10 I A V = -5V, I = 0A EBO EB C ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage V -0.5 V I = -500mA, I = -50mA CE(SAT) C B Base-Emitter Turn-On Voltage V -1.0 V I = -500mA, V = -2V BE(ON) C CE 40 250 I = -150mA, V = -2V C CE h FE 25 DC Current Gain I = -500mA, V = -2V C CE DCP52-16 100 250 I = -150mA, V = -2V C CE SMALL SIGNAL CHARACTERISTICS I = -50mA, V = -5V, C CE Transition Frequency f 200 MHz T f = 100MHz Note: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Not Recommended for New Design Alternative is BCP52 & BCP5216 1.2 1.0 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 2 of 4 June 2011 DCP52/-16 Diodes Incorporated www.diodes.com Document number: DS30708 Rev. 7 - 3 P , POWER DISSIPATION (W) D