Not Recommended for New Design Alternative is BCP53 & BCP5316 DCP53/-16 PNP SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary NPN Type Available (DCP56) 2 1 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR 2,4 Case: SOT-223 Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 1 BASE Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper leadframe 3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 EMITTER TOP VIEW Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Collector-Base Voltage V -100 V CBO Collector-Emitter Voltage V -80 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current -1.5 A I CM Continuous Collector Current -1 A I C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation at T = 25C (Note 3) P A d Operating and Storage Temperature Range T , T -55 to +150 C j STG Thermal Resistance, Junction to Ambient Air T = 25C (Note 3) R 125 C/W A JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V -100 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage -80 V V I = -10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5 V V I = -10A, I = 0 (BR)EBO E C V = -30V, I = 0 CB E -100 nA Collector Cutoff Current I V = -30V, I = 0, CBO CB E -20 A T = 150C A Emitter Cutoff Current I -10 A V = -5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage -0.5 V V I = -500mA, I = -50mA CE(SAT) C B Base-Emitter Turn-On Voltage -1.0 V V I = -500mA, V = -2V BE (ON) C CE I = -150mA, V = -2V 40 250 C CE h FE 25 I = -500mA, V = -2V DC Current Gain C CE DCP53-16 100 250 I = -150mA, V = -2V C CE SMALL SIGNAL CHARACTERISTICS I = -50mA, V = -5V, C CE Current Gain-Bandwidth Product 200 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree Policy can be found on our website at Not Recommended for New Design Alternative is BCP53 & BCP5316 1.2 1.0 0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 175 0 T , AMBIENT TEMPERATURE (C) A Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) 2 of 4 June 2011 DCP53/-16 Diodes Incorporated www.diodes.com Document number: DS30797 Rev. 5 - 3 P , POWER DISSIPATION (W) D