Not Recommended for New Design Alternative is BCP54 & BCP5416 DCP54/-16 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DCP51) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR 2,4 3 E Case: SOT-223 Case Material: Molded Plastic,Gree Molding Compound. C 4 2 C 1 UL Flammability Classification Rating 94V-0 BASE Moisture Sensitivity: Level 1 per J-STD-020C 1 B 3 Terminals: Finish Matte Tin annealed over Copper Leadframe EMITTER (Lead Free Plating). Solderable per MIL-STD-202, Method 208 TOP VIEW Marking & Type Code Information: See Page 3 Schematic and Pin Configuration Ordering Information: See Page 3 Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Emitter Voltage V 45 V CEO Collector-Base Voltage 45 V V CBO Emitter-Base Voltage 5 V V EBO Continuous Collector Current 1 A I C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation (Note 3) T = 25C P A d Operating and Storage Temperature Range T , T -55 to +150 C j STG Thermal Resistance Junction to Ambient Air T = 25C (Note 3) R 125 C/W A JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Off Characteristics (Note 4) Collector-Base Breakdown Voltage 45 V V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage 45 V V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage 5 V V I = 10A (BR)EBO E 100 nA V = 30V, I = 0 CB E Collector-Base Cutoff Current I CBO 10 A V = 30V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I 10 A V = 5V, I = 0A EBO EB C On Characteristics (Note 4) I = 5mA, V = 2V 63 C CE 63 250 h I = 150mA, V = 2V FE C CE DC Current Gain 40 I = 500mA, V = 2V C CE DCP54-16 100 250 I = 150mA, V = 2V C CE Collector-Emitter Saturation Voltage V 500 mV I = 500mA, I = 50mA CE(SAT) C B Base-Emitter Voltage V 1 V I = 500mA, V = 2V BE(ON) C CE Small Signal Characteristics Transition Frequency f 200 MHz I = 50mA, V = 5V, f = 100MHz T C CE Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Not Recommended for New Design Alternative is BCP54 & BCP5416 V , COLLECTOR EMITTER VOLTAGE (V) CE I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C 2 of 4 June 2011 DCP54/-16 Diodes Incorporated www.diodes.com Document number: DS30816 Rev. 6 - 3 V , BASE EMITTER TURN-ON VOLTAGE (V) BE(ON) V , COLLECTOR EMITTER CE(SAT) V , BASE EMITTER SATURATION VOLTAGE (V) BE(SAT) I, COLLECTOR CURRENT (A) C SATURATION VOLTAGE (V)