Not Recommended for New Design Alternative is BCP55 & BCP5516 DCP55/-16 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DCP52) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data Case: SOT-223 COLLECTOR 2,4 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C 1 Terminals: Finish Matte Tin annealed over Copper leadframe BASE (Lead Free Plating). Solderable per MIL-STD-202, Method 208 3 Marking & Type Code Information: See Page 3 EMITTER TOP VIEW Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 60 V CEO Emitter-Base Voltage V 5 V EBO Peak Pulse Current I 1.5 A CM Continuous Collector Current 1 A I C Thermal Characteristics Characteristic Symbol Value Unit 1 (Note 3) Power Dissipation T = 25C P W A d 2 (Note 4) Operating and Storage Temperature Range T T -55 to +150 C j, STG Thermal Resistance Junction to Ambient Air T = 25C (Note 3) R 125 C/W A JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Conditions OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage 60 V V I = 100A, I = 0A (BR)CBO C E Collector-Emitter Breakdown Voltage V 60 V I = 10mA, I = 0A (BR)CEO C B Emitter-Base Breakdown Voltage V 5 V I = 10A, I = 0A (BR)EBO E C 100 nA V = 30V, I = 0A CB E Collector Cut-Off Current I CBO 20 A V = 30V, I = 0A, T = 150C CB E A Emitter Cut-Off Current I 10 A V = 5V, I = 0A EBO EB C ON CHARACTERISTICS (Note 5) Collector-Emitter Saturation Voltage 0.5 V V I = 500mA, I = 50mA CE(SAT) C B Base-Emitter Turn-On Voltage 1.0 V V I = 500mA, V = 2V BE(ON) C CE 40 250 I = 150mA, V = 2V C CE h FE 25 DC Current Gain I = 500mA, V = 2V C CE DCP55-16 100 250 I = 150mA, V = 2V C CE SMALL SIGNAL CHARACTERISTICS I = 50mA, V = 5V, C CE Transition Frequency f 200 MHz T f = 100MHz Note: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at Not Recommended for New Design Alternative is BCP55 & BCP5516 V , COLLECTOR EMITTER VOLTAGE (V) CE I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C 2 of 4 June 2011 DCP55/-16 Diodes Incorporated www.diodes.com Document number: DS30707 Rev. 7 - 3 V , BASE EMITTER TURN-ON VOLTAGE (V) BE(ON) V , COLLECTOR EMITTER CE(SAT) V , BASE EMITTER SATURATION VOLTAGE (V) BE(SAT) I, COLLECTOR CURRENT (A) C SATURATION VOLTAGE (V)