Not Recommended for New Design Alternative is BCP56 & BCP5616 DCP56/-16 NPN SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction 3 Complementary PNP Type Available (DCP53) 2 Ideally Suited for Automated Assembly Processes 1 Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) 4 Gree Device (Note 2) SOT-223 Mechanical Data COLLECTOR 3 E 2,4 Case: SOT-223 Case Material: Molded Plastic, Green Molding Compound. 2 C 4 C UL Flammability Classification Rating 94V-0 1 Moisture Sensitivity: Level 1 per J-STD-020C BASE B 1 Terminals: Finish - Matte Tin annealed over Copper leadframe 3 (Lead Free Plating). Solderable per MIL-STD-202, Method 208 EMITTER TOP VIEW Marking & Type Code Information: See Page 3 Ordering Information: See Page 3 Schematic and Pin Configuration Weight: 0.115 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Collector-Base Voltage V 100 V CBO Collector-Emitter Voltage V 80 V CEO Emitter-Base Voltage 5 V V EBO Collector Current 1 A I C Thermal Characteristics Characteristic Symbol Value Unit 1 W Power Dissipation T = 25C (Note 3) P A d Operating and Storage Temperature Range T , T -55 to 150 C j STG Thermal Resistance, Junction to Ambient Air T = 25C (Note 3) 125 C/W A R JA Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 100 V I = 100 A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 80 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 5.0 V V I = 10 A, I = 0 (BR)EBO E C 0.1 V = 30V, I = 0 CB E Collector-Base Cutoff Current I A CBO 20 V = 30V, I = 0,T = 150C CB E A Emitter-Base Cutoff Current 10 I A V = 5.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 25 I = 5.0mA, V = 2.0V C CE 40 250 I = 150mA, V = 2.0V C CE h FE DC Current Gain 25 I = 500mA, V = 2.0V C CE DCP56-16 100 160 250 I = 150mA, V = 2.0V C CE Collector-Emitter Saturation Voltage 0.5 V V I = 500mA, I = 50mA CE(SAT) C B Base-Emitter Turn-On Voltage 1.0 V V I = 500mA, V = 2.0V BE (ON) C CE SMALL SIGNAL CHARACTERISTICS I = 50mA, V = 5.0V, C CE Current-Gain-Bandwidth Product 200 MHz f T f = 100MHz Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree Policy can be found on our website at Not Recommended for New Design Alternative is BCP56 & BCP5616 V , COLLECTOR EMITTER VOLTAGE (V) CE I , COLLECTOR CURRENT (A) C I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C 2 of 4 June 2011 DCP56/-16 Diodes Incorporated www.diodes.com Document number: DS30796 Rev. 7 - 3 V , BASE EMITTER TURN-ON VOLTAGE (V) BE(ON) V , COLLECTOR EMITTER CE(SAT) V , BASE EMITTER SATURATION VOLTAGE (V) BE(SAT) I, COLLECTOR CURRENT (A) C SATURATION VOLTAGE (V)