DCP69/-16/-25 20V PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT223 Complementary NPN Type Available (DCP68) Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Ideally Suited for Automated Assembly Processes Moisture Sensitivity: Level 1 per J-STD-020 Ideal for Medium Power Switching or Amplification Applications Terminals: Finish - Matte Tin Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. Green Device (Note 2) Solderable per MIL-STD -202, Method 208 Qualified to AEC-Q101 Standards for High Reliability Weight: 0.112 grams (approximate) SOT223 C B E Top View Top View Device Schematic Pin Out Configuration Ordering Information (Note 3) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel DCP69-13 P12 13 12 2500 DCP69-16-13 P12-16 13 12 2500 DCP69-25-13 P12-25 13 12 2500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at DCP69/-16/-25 Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Collector-Base Voltage V -25 V CBO Collector-Emitter Voltage V -20 V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current -1.0 A I C Peak Pulse Current -2.0 A I CM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 4) P 1 W D Thermal Resistance, Junction to Ambient Air (Note 4) R 125 C/W JA Power Dissipation (Note 5) P 2 W D Thermal Resistance, Junction to Ambient Air (Note 5) 62.5 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage -25 V BV I = -100 A, I = 0 CBO C E Collector-Emitter Breakdown Voltage (Note 6) BV -20 V I = -10mA, I = 0 CEO C B Emitter-Base Breakdown Voltage BV -5.0 V I = -100A, I = 0 EBO E C -100 nA V = -25V, I = 0 CB E Collector-Base Cutoff Current I CBO -10 A V = -25V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current -100 nA I V = -5.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 6) 50 V = -10V, I = -5.0mA CE C DCP69, DCP69-16, DCP69-25 60 V = -1.0V, I = -1.0A CE C DC Current Gain DCP69 h 85 375 V = -1.0V, I = -500mA FE CE C DCP69-16 100 250 V = -1.0V, I = -500mA CE C DCP69-25 160 375 V = -1.0V, I = -500mA CE C Collector-Emitter Saturation Voltage V -0.5 V I = -1.0A, I = -100mA CE(sat) C B = -10V, I = -5.0mA -0.7 V CE C Base-Emitter Turn-On Voltage V V BE (on) -1.0 V = -1.0V, I = -1.0A CE C SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product f 40 200 MHz V = -5.0V, I = -50mA, f = 100MHz T CE C Output Capacitance C 17 pF V = -10V, f = 1 MHz obo CB Notes: 4. Device mounted on FR-4 PCB pad layout as shown on in Diodes Inc. suggested pad layout document, which can be found on our website at