EMITTER DJT4030P LOW V PNP SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Ideally Suited for Automated Assembly Processes Case: SOT-223 Complementary NPN Type Available (DJT4031N) Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Collector-Emitter Saturation Voltage Moisture Sensitivity: Level 1 per J-STD-020D Ideal for Medium Power Switching or Amplification Applications Terminals: Finish Matte Tin annealed over Copper leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate) 2,4 1 3 Pin Out Configuration Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage -40 V V CBO Collector-Emitter Voltage -40 V V CEO Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -5 A CM Continuous Collector Current I -3 A C Base Current I -1 A B Thermal Characteristics Characteristic Symbol Value Unit 1.2 W Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R 104 C/W A JA Power Dissipation (Note 4) T = 25C P 2 W A D 62.5 C/W Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DJT4030P Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage V -40 V I = -100A (BR)CBO C Collector-Emitter Breakdown Voltage V -40 V I = -10mA (BR)CEO C Emitter-Base Breakdown Voltage V -6 V I = -50A (BR)EBO E -100 nA V = -40V, I = 0 CB E Collector-Base Cutoff Current I CBO -50 A V = -40V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I -100 nA V = -6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 5) 220 V = -1V, I = -0.5A CE C DC Current Gain 200 400 h V = -1V, I = -1A FE CE C 100 V = -1V, I = -3A CE C -150 I = -0.5A, I = -5mA C B Collector-Emitter Saturation Voltage V -200 mV I = -1A, I = -10mA CE(SAT) C B -500 I = -3A, I = -0.3A C B Equivalent On-Resistance R 167 m I = -3A, I = -0.3A CE(SAT) E B Base-Emitter Saturation Voltage V -1.0 V I = -1A, I = -0.1A BE(SAT) C B Base-Emitter Turn-on Voltage V -1.0 V V = -2V, I = -1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = -10V, I = -100mA, CE C Transition Frequency f 150 MHz T f = 100MHz Output Capacitance 35 pF C V = -10V, f = 1MHz obo CB Input Capacitance 150 pF C V = -5V, f = 1MHz ibo CB SWITCHING CHARACTERISTICS Turn-On Time 53 ns t on V = -10V, I = -2A, CC C Delay Time 12 ns t d I = -200mA B1 Rise Time t 41 ns r Turn-Off Time t 180 ns off V = -10V, I = -2A, CC C Storage Time t 146 ns s I = I = -200mA B1 B2 Fall Time t 34 ns f Notes: 5. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2.0 10 1.6 Pw = 1ms 1 DC 1.2 (Note 4) Pw = 100ms Pw = 10ms 0.8 0.1 (Note 3) 0.4 0.01 0 0.1 1 10 100 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) 2 of 5 March 2009 DJT4030P Diodes Incorporated www.diodes.com Document number: DS31590 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (W) D I, COLLECTOR CURRENT (A) C