EMITTER DJT4031N LOW V NPN SURFACE MOUNT TRANSISTOR CE(SAT) Features Mechanical Data Ideally Suited for Automated Assembly Processes Case: SOT-223 Complementary PNP Type Available (DJT4030P) Case Material: Molded Plastic,Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Collector-Emitter Saturation Voltage Moisture Sensitivity: Level 1 per J-STD-020D Ideal for Medium Power Switching or Amplification Applications Terminals: Finish Matte Tin annealed over Copper leadframe Lead Free By Design/RoHS Compliant (Note 1) (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Gree Device (Note 2) Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.115 grams (approximate) 2,4 1 3 Pin Out Configuration Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage 40 V V CBO Collector-Emitter Voltage 40 V V CEO Emitter-Base Voltage V 6 V EBO Peak Pulse Current I 5 A CM Continuous Collector Current I 3 A C Base Current I 1 A B Thermal Characteristics Characteristic Symbol Value Unit 1.2 W Power Dissipation (Note 3) T = 25C P A D Thermal Resistance, Junction to Ambient Air (Note 3) T = 25C R 104 C/W A JA Power Dissipation (Note 4) T = 25C P 2 W A D 62.5 C/W Thermal Resistance, Junction to Ambient Air (Note 4) T = 25C R A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DJT4031N Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 40 V I = 100A (BR)CBO C Collector-Emitter Breakdown Voltage V 40 V I = 10mA (BR)CEO C Emitter-Base Breakdown Voltage V 6 V I = 50A (BR)EBO E 100 nA V = 40V, I = 0 CB E Collector-Base Cutoff Current I CBO 50 A V = 40V, I = 0, T = 150C CB E A Emitter-Base Cutoff Current I 100 nA V = 6V, I = 0 EBO EB C ON CHARACTERISTICS (Note 4) 220 V = 1V, I = 0.5A CE C DC Current Gain 200 500 h V = 1V, I = 1A FE CE C 100 V = 1V, I = 3A CE C 100 I = 0.5A, I = 5mA C B Collector-Emitter Saturation Voltage V 150 mV I = 1A, I = 10mA CE(SAT) C B 300 I = 3A, I = 0.3A C B Equivalent On-Resistance R 100 m I = 3A, I = 0.3A CE(SAT) E B Base-Emitter Saturation Voltage V 1.0 V I = 1A, I = 0.1A BE(SAT) C B Base-Emitter Turn-on Voltage V 1.0 V V = 2V, I = 1A BE(ON) CE C SMALL SIGNAL CHARACTERISTICS V = 10V, I = 100mA, CE C Transition Frequency f 105 MHz T f = 100MHz Output Capacitance 27 pF C V = 10V, f = 1MHz obo CB Input Capacitance 180 pF C V = 5V, f = 1MHz Ibo CB SWITCHING CHARACTERISTICS Turn-On Time 45 ns t on V = 10V, I = 2A, CC C Delay Time 14 ns t d I = 200mA B1 Rise Time t 31 ns r Turn-Off Time t 276 ns off V = 10V, I = 2A, CC C Storage Time t 244 ns s I = I = 200mA B1 B2 Fall Time t 32 ns f Notes: 4. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%. 2.0 10 Pw = 1ms 1.6 1 DC Pw = 100ms 1.2 (Note 4) Pw = 10ms 0.8 0.10 (Note 3) 0.4 0.01 0 0.1 1 10 100 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (C) V , COLLECTOR-EMITTER VOLTAGE (V) A CE Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) 2 of 5 March 2009 DJT4031N Diodes Incorporated www.diodes.com Document number: DS31603 Rev. 2 - 2 NEW PRODUCT P , POWER DISSIPATION (W) D I, COLLECTOR CURRENT (A) C