DMB2227A COMPLEMENTARY NPN / PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Complementary Pair SOT-26 Epitaxial Planar Die Construction E C C 1 1 2 Dim Min Max Typ One 2222A Type (NPN), A 0.35 0.50 0.38 One 2907A Type (PNP) B C Ideal for Low Power Amplification and Switching B 1.50 1.70 1.60 Lead Free By Design/RoHS Compliant (Note 2) B E B 1 2 2 C 2.70 3.00 2.80 Green Devic (Note 3) D 0.95 H Mechanical Data F 0.55 K Case: SOT-26 H 2.90 3.10 3.00 M Case Material: Molded Plastic, Green Molding J 0.013 0.10 0.05 Compound. UL Flammability Classification Rating 94V-0 J F L K 1.00 1.30 1.10 D Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper L 0.35 0.55 0.40 leadframe. Solderable per MIL-STD-202, Method 208 M 0.10 0.20 0.15 Terminal Connections: See Diagram Note: E1, B1, and C1 = 2222A Type (NPN) Ordering & Date Code Information: See Page 6 0 8 E2, B2, and C2 = 2907A Type (PNP) Marking Information: See Page 6 Type marking indicates orientation All Dimensions in mm Weight: 0.006 grams (approximate) C E C 1 2 1 B B E 1 2 2 Maximum Ratings: 2222A Type (NPN) T = 25C unless otherwise specified A Characteristic Symbol 2222A (NPN) Unit Collector-Base Voltage 75 V V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current - Continuous I 600 mA C Maximum Ratings: 2907A Type (PNP) T = 25C unless otherwise specified A Characteristic Symbol 2907A (PNP) Unit Collector-Base Voltage V -60 V CBO Collector-Emitter Voltage V -60 V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current - Continuous -600 mA I C Maximum Ratings: Total T = 25C unless otherwise specified A Characteristic Symbol Value Unit Power Dissipation (Note 1) 300 mW P D Thermal Resistance, Junction to Ambient (Note 1) R 417 C/W JA Operating and Storage Temperature Range -55 to +150 T , T C j STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics: 2222A Type (NPN) T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V 75 V I = 10A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 40 V I = 10mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 6.0 V I = 10A, I = 0 (BR)EBO E C nA V = 60V, I = 0 CB E Collector Cutoff Current I 10 CBO A V = 60V, I = 0, T = 150C CB E A Collector Cutoff Current I 10 nA V = 60V, V = 3.0V CEX CE EB(OFF) Emitter Cutoff Current I 10 nA V = 3.0V, I = 0 EBO EB C Base Cutoff Current 20 nA I V = 60V, V = 3.0V BL CE EB(OFF) ON CHARACTERISTICS (Note 4) I = 100A, V = 10V C CE 35 I = 1.0mA, V = 10V C CE 50 I = 10mA, V = 10V 75 C CE DC Current Gain h 100 300 I = 150mA, V = 10V FE C CE 40 I = 500mA, V = 10V C CE 50 I = 10mA, V = 10V, T = -55C C CE A 35 I = 150mA, V = 1.0V C CE 0.3 I = 150mA, I = 15mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 1.0 I = 500mA, I = 50mA C B 0.6 I = 150mA, I = 15mA 1.2 C B Base-Emitter Saturation Voltage V V BE(SAT) 2.0 I = 500mA, I = 50mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 8 pF V = 10V, f = 1.0MHz, I = 0 obo CB E Input Capacitance C 25 pF V = 0.5V, f = 1.0MHz, I = 0 ibo EB C V = 20V, I = 20mA, CE C Current Gain-Bandwidth Product 300 MHz f T f = 100MHz SWITCHING CHARACTERISTICS Delay Time t 10 ns V = 30V, I = 150mA, d CC C Rise Time 25 ns V = - 0.5V, I = 15mA t BE(off) B1 r Storage Time 225 ns t V = 30V, I = 150mA, s CC C Fall Time t 60 ns I = I = 15mA f B1 B2 Notes: 4. Pulse test: pulse width 300S, duty cycle 2%. DS31217 Rev. 4 - 2 2 of 6 DMB2227A Diodes Incorporated www.diodes.com NEW PRODUCT