DMC1017UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI 5060-8
Product Summary Features and Benefits
I Thermally Efficient Package-Cooler Running Applications
D
Device V R
(BR)DSS DS(ON)
T = +25C High Conversion Efficiency
A
Low R Minimizes On State Losses
17m @ V = 4.5V 9.5A DS(ON)
GS
Q1 12V
Low Input Capacitance
25m @ V = 2.5V 7.8A
GS
Fast Switching Speed
32m @ V = -4.5V -6.9A
GS
Q2 -12V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
53m @ V = -2.5V -5.4A
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation Complementary Pair Enhancement Mode
Mechanical Data
MOSFET has been designed to minimize R and yet maintain
DS(on)
Case: POWERDI5060-8
superior switching performance. This device is ideal for use in
Case Material: Molded Plastic, Green Molding Compound. UL
Notebook battery power management and Loadswitch.
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Notebook Battery Power Management
Terminal Connections: See Diagram Below
DC-DC Converters
Weight: 0.097 grams (approximate)
Loadswitch
D1 D2
S1
D1
G1
D1
G1 G2
D2
S2
D2
G2
S1 S2
Pin1
Top View
Q1 N-Channel MOSFET Q2 P-Channel MOSFET
Top View
Bottom View
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMC1017UPD-13 POWERDI5060-8 2500 / Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See
DMC1017UPD
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Q1 Value Q2 Value Units
Drain-Source Voltage V 12 -12 V
DSS
Gate-Source Voltage V 8 8 V
GSS
Steady T = +25C 9.5 -6.9
A
A
I
D
State 7.6 -5.5
T = +70C
A
Continuous Drain Current (Note 5) V = 4.5V
GS
T = +25C 13.0 -9.4
A
t<10s I A
D
10.4 -7.5
T = +70C
A
Maximum Body Diode Forward Current I 2 -2 A
S
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 50 -35 A
DM
Avalanche Current (Note 6) L = 0.1mH I 9.7 -9.2 A
AS
Avalanche Energy (Note 6) L = 0.1mH E 4.7 4.3 mJ
AS
Thermal Characteristics
Characteristic Symbol Value Units
T = +25C 2.3
A
Total Power Dissipation (Note 5) P W
D
T = +70C 1.5
A
Steady state 54
Thermal Resistance, Junction to Ambient (Note 5) R
JA
t<10s 29
C/W
Thermal Resistance, Junction to Case (Note 5) R 4.1
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics Q1 N-Channel (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 12V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.6 1.5 V V = V , I = 250A
GS(th) DS GS D
9.6 17 V = 4.5V, I = 11.8A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
11 25
VGS = 2.5V, ID = 9.8A
Diode Forward Voltage 0.7 1.2 V
VSD VGS = 0V, IS = 2.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 1787
C
iss
V = 6V, V = 0V,
DS GS
Output Capacitance 297 pF
C
oss
f = 1.0MHz
Reverse Transfer Capacitance 265
C
rss
Gate Resistance 1.6
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
Total Gate Charge (V = 4.5V) Q 18.6
GS g
Total Gate Charge (V = 10V) Q 35.4
GS g
nC V = 6V, I = 11.8A
DS D
Gate-Source Charge Q 2.7
gs
Gate-Drain Charge Q 3.8
gd
Turn-On Delay Time t 6.9
D(on)
Turn-On Rise Time 10.9
t V = 6V, R = 6
r DD L
nS
Turn-Off Delay Time 70.3 V = 4.5V, R = 6, I = 1A
t GS G D
D(off)
Turn-Off Fall Time 31.8
t
f
Body Diode Reverse Recovery Time 13.1 nS
t I = 11.8A, di/dt = 100A/s
rr F
Body Diode Reverse Recovery Charge 2.2 nC
Q I = 11.8A, di/dt = 100A/s
rr F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I and E rating are based on low frequency and duty cycles to keep T = 25C.
AS AS J
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
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DMC1017UPD September 2015
Diodes Incorporated
www.diodes.com
Document number: DS36903 Rev. 1 - 2