DMC1028UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device BV R DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 25m V = 4.5V 6.1A GS Q1 Low Input/Output Leakage 12V 32m V = 2.5V 5.4A GS N-Channel ESD Protected Gate 4.9A 40m V = 1.8V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -3.5A 80m V = -4.5V Halogen and Antimony Free. Green Device (Note 3) GS For automotive applications requiring specific change control -3.1A Q2 100m V = -2.5V GS -20V (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and P-Channel -2.6A 140m V = -1.8V GS manufactured in IATF 16949 certified facilities), please 210m V = -1.5V -2.1A GS contact us or your local Diodes representative. DMC1028UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Q1 Q2 Characteristic Symbol Unit N-Channel P-Channel Drain-Source Voltage 12 -20 V V DSS Gate-Source Voltage V 8 8 V GSS Continuous Drain Current (Note 6) Steady T = +25C 6.1 -3.5 A N-Channel: V = 4.5V GS I A D State 4.7 -2.7 TA = +70C P-Channel: V = -4.5V GS -1.4 Maximum Continuous Body Diode Forward Current (Note 6) I 1.4 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 35 -20 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.8 W D Steady State 157 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<5s 102 Total Power Dissipation (Note 6) P 1.2 W D Steady State 108 Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 64 C/W Thermal Resistance, Junction to Case (Note 6) R 18 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 12 V BV V = 0V, I = 250A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 12V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.4 1 V V V = V , I = 250A GS(TH) DS GS D 17 25 V = 4.5V, I = 5.2A GS D Static Drain-Source On-Resistance R 21 32 m V = 2.5V, I = 4.8A DS(ON) GS D 30 40 V = 1.8V, I = 2.5A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 787 pF CISS V = 6V, V = 0V, DS GS Output Capacitance 203 pF C OSS f = 1.0MHz Reverse Transfer Capacitance 177 pF C RSS Gate Resistance 4.8 R V = 0V, V = 0V, f = 1MHz G DS GS 10.5 nC Total Gate Charge (V = 4.5V) GS Q G 18.5 nC Total Gate Charge (V = 8V) GS V = 6V, I = 6.8A DS D Gate-Source Charge Q 1.2 nC GS Gate-Drain Charge Q 2.9 nC GD Turn-On Delay Time t 4.6 ns D(ON) Turn-On Rise Time t 9.4 ns R V = 6V, V = 4.5V, DD GS Turn-Off Delay Time 15.7 ns R = 1.1, R = 1 tD(OFF) L G Turn-Off Fall Time 3.7 ns t F Body Diode Reverse Recovery Time 12.0 ns t I = 5.4A, di/dt = 100A/s RR S Body Diode Reverse Recovery Charge 1.8 nC Q I = 5.4A, di/dt = 100A/s RR S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 10 October 2019 DMC1028UVT www.diodes.com Diodes Incorporated Document number: DS39562 Rev. 5 - 2 ADVANCED INFORMATION