DMC1029UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX Device V R (BR)DSS DS(ON) max T = +25C A Low Input Capacitance 5.6A Low Profile, 0.6mm Max Height 29m VGS = 4.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Q1 34m V = 2.5V GS 12V N-Channel 4.5A 44m V = 1.8V Halogen and Antimony Free. Green Device (Note 3) GS 3.7A 65m V = 1.5V GS 61m V = -4.5V -3.8A GS 81m V = -2.5V -3.3A Q2 GS Mechanical Data -12V P-Channel -2.8A 115m V = -1.8V GS Case: U-DFN2020-6 210m V = -1.5V -2.3A GS Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Description Moisture Sensitivity: Level 1 per J-STD-020 This MOSFET has been designed to minimize the on-state resistance Terminals: Finish NiPdAu over Copper Leadframe. Solderable per e4 (R ) and yet maintain superior switching performance, making it DS(ON) MIL-STD-202, Method 208 ideal for high efficiency power management applications. Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) Applications Load Switch Power Management Functions D 2 D 1 Portable Power Adaptors U-DFN2020-6 S2 G2 D2 D1 G2 G1 D1 D2 G1 S2 S1 S1 Pin1 N-CHANNEL MOSFET P-CHANNEL MOSFET Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMC1029UFDB -7 U-DFN2020-6 3000/Tape & Reel DMC1029UFDB -13 U-DFN2020-6 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC1029UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Q1 Q2 Characteristic Symbol Units N-CHANNEL P-CHANNEL Drain-Source Voltage V 12 -12 V DSS Gate-Source Voltage V 8 8 V GSS Steady T = +25C 5.6 -3.8 A I A D State 4.4 -3.0 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS 7.2 -5.0 T = +25C A t < 5s A I D 5.8 -4.0 T = +70C A -1 Maximum Continuous Body Diode Forward Current (Note 5) I 1 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 20 -15 A DM Avalanche Current (L = 0.1mH) I 15 -12 A AS Avalanche Energy (L = 0.1mH) E 12 8 mJ AS Thermal Characteristics Characteristic Symbol Value Units Steady State 1.4 Total Power Dissipation (Note 5) P W D t < 5s 2.2 Steady State 91 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 5s 55 C/W Thermal Resistance, Junction to Case 20 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Note: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 2 of 9 DMC1029UFDB February 2015 Diodes Incorporated www.diodes.com Document number: DS37710 Rev. 2 - 2 NEW PRODUCT