DMC1229UFDB COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D Device V R Max (BR)DSS DS(ON) T = +25C A Low Input Capacitance 5.6A Low Profile, 0.6mm Max Height 29m VGS = 4.5V 5.1A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Q1 34m V = 2.5V GS 12V N-Channel 4.5A 44m V = 1.8V Halogen and Antimony Free. Green Device (Note 3) GS 3.7A 65m V = 1.5V GS Qualified to AEC-Q101 Standards for High Reliability 61m V = -4.5V -3.8A GS 81m V = -2.5V -3.3A Q2 GS -12V P-Channel -2.8A 115m V = -1.8V GS 170m V = -1.5V -2.3A GS Mechanical Data Description This MOSFET is designed to minimize the on-state resistance Case: U-DFN2020-6 (Type B) (R ), yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable per Applications e4 MIL-STD-202, Method 208 Loadswitch Terminals Connections: See Diagram Below Power Management Functions Weight: 0.0065 grams (Approximate) Portable Power Adaptors U-DFN2020-6 D2 D 1 (Type B) S2 G2 D2 D1 G2 G1 D1 D2 G1 S2 S1 S1 Pin1 P-CHANNEL MOSFET N-CHANNEL MOSFET Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMC1229UFDB -7 U-DFN2020-6 Type B 3,000/Tape & Reel DMC1229UFDB -13 U-DFN2020-6 Type B 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC1229UFDB Marking Information D2 = Product Type Marking Code YM = Date Code Marking D2 Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year 2012 2013 2014 2015 2016 2017 2018 Code Z A B C D E F Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Q1 Q2 Characteristic Symbol Units N-Channel P-Channel Drain-Source Voltage 12 -12 V V DSS Gate-Source Voltage 8 8 V V GSS Steady T = +25C 5.6 -3.8 A I A D State T = +70C 4.4 -3.0 A Continuous Drain Current (Note 5) V = 4.5V GS T = +25C 7.2 -5.0 A t<5s A I D 5.8 -4.0 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) 1 -1 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 20 -15 A DM Thermal Characteristics Characteristic Symbol Value Units Steady State 1.4 Total Power Dissipation (Note 5) W P D t<5s 2.2 Steady State 92 Thermal Resistance, Junction to Ambient (Note 5) R JA t<5s 55 C/W Thermal Resistance, Junction to Case (Note 5) R 30 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Note: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. copper, single sided. 2 of 9 DMC1229UFDB November 2015 Diodes Incorporated www.diodes.com Document number: DS36128 Rev. 5 - 2 YM