X-On Electronics has gained recognition as a prominent supplier of DMC2020USD-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMC2020USD-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the DMC2020USD-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMC2020USD-13 and other electronic components in the MOSFETs category and beyond.
A Product Line of Diodes Incorporated DMC2020USD 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Reduced footprint with two discretes in a single SO8 I Max D Low gate drive Device V R max (BR)DSS DS(on) T = 25 C A Low input capacitance (Notes 3 & 5) Fast Switching Speed Low Input/Output Leakage 20m V = 4.5V 8.5A GS ESD Protected up to 2kV Q1 20V 28m V = 2.5V 7.2A Lead Free, RoHS Compliant (Note 1) GS Halogen and Antimony Free.Gree Device (Note 1) 33m V = -4.5V -6.8A GS Q2 -20V 45m V = -2.5V -5.8A GS Mechanical Data Case: SO-8 Case Material: Molded Plastic, Green Molding Compound. Description and Applications UL Flammability Classification Rating 94V-0 This MOSFET has been designed to minimize the on-state resistance Moisture Sensitivity: Level 1 per J-STD-020 (R ) and yet maintain superior switching performance, making it DS(on) Terminals Connections: See Diagram ideal for high efficiency power management applications. Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Motor control Weight: 0.074 grams (approximate) DC-DC Converters Power management functions Notebook Computers and Printers Drain Drain SO-8 S1 D1 Body Body Diode Diode Gate Gate D1 G1 Gate Gate S2 D2 Protection Protection Source Source Diode Diode D2 G2 Q1 N-Channel Q2 P-Channel Top View ESD PROTECTED TO 2kV Equivalent Circuit Top View Ordering Information (Note 1) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DMC2020USD-13 C2020UD 13 12 2,500 Notes: 1. No purposefully added lead. Diodes Inc. sGree policy and packaging details can be found on our website at A Product Line of Diodes Incorporated DMC2020USD Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Units Drain-Source Voltage 20 -20 V DSS V Gate-Source Voltage V 10 10 GSS (Notes 3 & 5) 8.5 -6.8 6.8 -5.4 T = 70C (Notes 3 & 5) A Continuous Drain Current V = 4.5V I GS D (Notes 2 & 5) 6.5 -5.2 (Notes 2 & 6) 7.8 -6.3 A Pulsed Drain Current V = 4.5V (Notes 4 & 5) I 33.6 -26.8 GS DM Continuous Source Current (Body diode) (Notes 3 & 5) I 4.0 -4.0 S Pulsed Source Current (Body diode) (Notes 4 & 5) I 33.6 -26.8 SM Thermal Characteristics T = 25C unless otherwise specified A Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit 1.25 (Notes 2 & 5) 10 Power Dissipation 1.8 W (Notes 2 & 6) Linear Derating Factor P D 14.3 mW/C 2.14 (Notes 3 & 5) 17.2 (Notes 2 & 5) 100 Thermal Resistance, Junction to Ambient (Notes 2 & 6) 70 R JA C/W (Notes 3 & 5) 58 Thermal Resistance, Junction to Lead (Notes 5 & 7) R 51 JL Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 2 of 11 February 2011 DMC2020USD Diodes Incorporated www.diodes.com Document number: DS32121 Rev. 4 - 2
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