DMC2038LVT Diodes Incorporated

DMC2038LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D Device V R (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 4.5A 35m V = 4.5V GS Q1 20V Low Input/Output Leakage 3.5A 56m V = 1.8V GS Fast Switching Speed 74m V = -4.5V -3.1A GS Q2 -20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -2.0A 168m V = -1.8V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This MOSFET has been designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) Case: TSOT26 ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Matte Tin annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Terminal Connections Indicator: See diagram Backlighting Weight: 0.013 grams (approximate) Q1 Q2 D1 D2 TSOT26 G1 1 6 D1 G1 G2 S2 2 5 S1 G2 3 4 D2 S1 S2 Top View Top View Pin Configuration N-Channel P-Channel Ordering Information (Note 4) Part Number Compliance Case Packaging DMC2038LVT-7 Standard TSOT26 3000/Tape & Reel DMC2038LVTQ-7 Automotive TSOT26 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC2038LVT Maximum Ratings N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 20 V V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 3.7 A I A D State T = +70C 3.0 A Continuous Drain Current (Note 5) V = 4.5V GS 4.1 T = +25C A t<10s A I D 3.2 T = +70C A Steady T = +25C 4.5 A I A D State T = +70C 3.6 A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 5.2 A t<10s A I D 4.2 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 1.5 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 25 A DM Maximum Ratings P-CHANNEL Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C -2.6 A A I D State -2.1 T = +70C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25C -2.9 A t<10s I A D T = +70C -2.4 A Steady T = +25C -3.1 A I A D State -2.5 T = +70C A Continuous Drain Current (Note 6) V = -4.5V GS -3.8 T = +25C A t<10s I A D T = +70C -3.0 A Maximum Continuous Body Diode Forward Current (Note 6) I -1.5 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I -17 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.8 A Total Power Dissipation (Note 5) P W D 0.5 T = +70C A Steady State 168 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 120 1.1 T = +25C A Total Power Dissipation (Note 6) P W D 0.7 T = +70C A Steady State 114 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 72 C/W Thermal Resistance, Junction to Case (Note 6) 39 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 September 2013 DMC2038LVT Diodes Incorporated www.diodes.com Document number: DS35417 Rev. 6 - 2 NEW PRODUCT