DMC2400UV COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D Device BVDSS RDS(ON) Max Low Gate Threshold Voltage VGS(TH) <1V TA = +25C Low Input Capacitance 0.5 VGS = 4.5V 1030mA Fast Switching Speed Q1 20V 0.9 VGS = 1.8V 740mA Low Input/Output Leakage Complementary Pair MOSFET 1.0 V = -4.5V -700mA GS Q2 -20V Ultra-Small Surface Mount Package 2.0 V = -1.8V -460mA GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP This new generation MOSFET has been designed to minimize the capable, and manufactured in IATF 16949 certified on-state resistance (RDS(ON)) yet maintain superior switching facilities), please contact us or your local Diodes performance, making it ideal for high efficiency power management representative. applications. DMC2400UV Maximum Ratings - Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C Steady A 1030 I mA D State 800 TA = +70C Continuous Drain Current (Note 7) V = 4.5V GS TA = +25C 1150 t<10s mA ID 900 T = +70C A T = +25C Steady A 740 I mA D State 570 TA = +70C Continuous Drain Current (Note 7) V = 1.8V GS TA = +25C 870 t<10s I mA D 700 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 3 A DM Maximum Body Diode Continuous Current I 800 mA S Maximum Ratings - Q2 P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage V 8 V GSS Steady T = +25C -700 A ID mA State -550 TA = +70C Continuous Drain Current (Note 7) V = -4.5V GS TA = +25C -820 t<10s I mA D -640 T = +70C A Steady T = +25C -460 A mA ID State -350 TA = +70C Continuous Drain Current (Note 7) VGS = -1.8V TA = +25C -550 t<10s I mA D -420 TA = +70C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -2 A DM Maximum Body Diode Continuous Current I -800 mA S Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 0.45 W PD Steady State 281 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 210 C/W Total Power Dissipation (Note 7) 1 W PD Steady State 129 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 97 C/W Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 10 DMC2400UV March 2020 Diodes Incorporated www.diodes.com Document number: DS35537 Rev. 11 - 2 ADVANCE INFORMATION NEW PRODUCT