DMC25D0UVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low On-Resistance D Device V R (BR)DSS DS(ON) T = +25C A Low Input Capacitance Q1 25V 4 V = 4.5V 0.4 A GS Fast Switching Speed 80m V = -12V -3.2 A Low Input/Output Leakage GS Q2 -30V ESD Protected Gate on N-Channel (>6kV Human Body Model) 125m V = -4.5V -2.6 A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Mechanical Data making it ideal for high efficiency power management applications. Case: TSOT26 Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals Connections: See Diagram Load Switch Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (Approximate) D1 D2 TSOT26 G2 G1 Gate Protection S1 S2 Diode Top View Top View Q2 P-Channel MOSFET Q1 N-Channel MOSFET Internal Circuit Ordering Information (Note 4) Part Number Case Packaging DMC25D0UVT-7 TSOT26 3000 / Tape & Reel DMC25D0UVT-13 TSOT26 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMC25D0UVT Maximum Ratings Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 25 V DSS -0.5 Gate-Source Voltage V V GSS +8 0.4 A Continuous Drain Current (Note 5) V = 4.5V I GS D Maximum Continuous Body Diode Forward Current (Note 6) 1.2 A I S Pulsed Drain Current (Note 6) 1.5 A I DM Maximum Ratings Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 12 V GSS Steady State -3.2 A Continuous Drain Current (Note 5) V = -10V GS Note 9 -14.4 A ID Continuous Drain Current (Note 5) V = -4.5V -2.6 A GS Maximum Continuous Body Diode Forward Current (Note 6) -1.2 A I S Pulsed Drain Current (Note 6) -20 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 1.2 W D Steady State 101 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA Note 9 5 Thermal Resistance, Junction to Case (Note 5) R 37 C/W JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 25 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.65 0.85 1.5 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 3.8 4 V = 4.5V, I = 0.4A DS(ON) GS D Diode Forward Voltage V 0.76 1.2 V V = 0V, I = 0.29A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 26.2 Input Capacitance C iss V = 10V, V = 0V, DS GS 7.1 Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance 2.7 C rss Gate Resistance 84.5 R V = 0V, V = 0V, f = 1MHz g DS GS 0.4 Total Gate Charge (V = 4.5V) Q GS g 0.7 Total Gate Charge (V = 8V) Q GS g nC V = 5V, I = 0.2A DS D 0.1 Gate-Source Charge Q gs 0.1 Gate-Drain Charge Q gd 3 Turn-On Delay Time t D(ON) 2.3 Turn-On Rise Time t R V = 4.5V, V = 6V, GS DS ns 7.7 Turn-Off Delay Time t R = 50, I = 0.5A D(OFF) G D 3.7 Turn-Off Fall Time tF Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2 of 11 April 2015 DMC25D0UVT www.diodes.com Diodes Incorporated Document number: DS37508 Rev. 3 - 2 ADVNAENWC EP RINOFDOURCMT ATION